A 250–310 GHz Power Amplifier with 15-Db Peak Gain in 130-Nm SiGe BiCMOS Process for Terahertz Wireless System

Xingcun Li,Wenhua Chen,Peigen Zhou,Yunfan Wang,Fei Huang,Shuyang Li,Jixin Chen,Zhenghe Feng

DOI: https://doi.org/10.1109/tthz.2021.3099057

IF: 3.2

2022-01-01

IEEE Transactions on Terahertz Science and Technology

Abstract:This article presents a broadband THz power amplifier (PA) operating close to the maximum oscillation frequency (f(max)) with proposed power combining and stagger-tuned gain boosting techniques. A compact broadband power combiner based on the compensated three-conductor transmission line (T-line) balun is proposed to simultaneously achieve broadband matching and power combining. A 4-stage stagger-tuned gain boosting amplifier operating closely to f(max) is investigated to achieve a flattened power gain. Based on the proposed techniques, a broadband 300-GHz PA is implemented in a 130-nm SiGe BiCMOS process with f(t)/f(max) = 350/450 GHz. It exhibits a peak gain of 15 dB and 3-dB bandwidth of 67 GHz (247-314 GHz) with 2.5 V supply voltage. At 290 GHz, a 5-dBm maximum output power POUT-MAX was measured with a 1-dB compressed output power OP-1 dB of 3.3 dBm and a maximum PAE of 1.19%. The measured output power POUT-MAX and OP-1dB of the PA are 2.2-5 dBm and 0.6-3.3 dBm over 250-300 GHz, respectively. To the best of our knowledge, this PA achieves the highest operational frequency and widest bandwidth compared with other works in SiGe/CMOS process operating closely to f(max).