Abstract:This article presents a $D$ -band Doherty power amplifier (PA) featuring a low-loss and compact slotline-based eight-way power combiner to improve the saturated output power and power back-off (PBO) efficiency. The proposed combiner consists of grounded coplanar waveguides (GCPWs), slotlines, and SLOT-GCPW coupling structures. Instead of the conventional transformer structure, the proposed SLOT-GCPW coupling structure effectively reduces insertion loss, increases the common-mode rejection, and encounters a comfortable symmetrical compact layout. More importantly, the proposed combiner can also be applied to achieve impedance inverters for active load modulation in a compact size. Based on the proposed multiway combining Doherty PA prototype, a high-efficiency and high-output $D$ -band PA is implemented in a 130-nm SiGe bipolar CMOS (BiCMOS) with ${f_{t}/f_{\max }}$ of 350/450 GHz. The extremely compact power combiner leads to a small PA core area of $1.1 \times 0.53$ mm2. The PA achieves a peak small-signal gain of 21.8 dB with 3-dB bandwidth from 107 to 135 GHz. At 110/120/130 GHz, the PA achieves 22.7/22.6/22.4 dBm ${P_{\mathrm{ sat}}}$ with 18.7%/17.2%/16.1% peak power-added efficiency (PAE) and 12.1%/11.7%/9.8% PAE at 6-dB PBO from ${P_{\mathrm{ sat}}}$ . Modulation measurement with single-carrier 16-quadrature amplitude modulation (QAM) and 64-QAM signals has been performed. For a 2-GHz 16-QAM signal, the PA achieves 13.74 dBm ${P_{\mathrm{ avg}}}$ and 7.88% average collector efficiency with 11.6% error vector magnitude (EVM) at 131.5 GHz. The PA also supports a 2-GHz 64-QAM signal, achieving 13.76 dBm ${P_{\mathrm{ avg}}}$ and 7.92% average collector efficiency with 11.9% EVM at 131.5 GHz.

A 110-to-130ghz SiGe BiCMOS Doherty Power Amplifier with Slotline-Based Power-Combining Technique Achieving >22dbm Saturated Output Power and >10% Power Back-off Efficiency.

A 68.5~90 GHz High-Gain Power Amplifier with Capacitive Stability Enhancement Technique in 0.13 Μm SiGe BiCMOS

A 110-to-130 GHz SiGe BiCMOS Doherty Power Amplifier with a Slotline-Based Power Combiner

A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS

A 60GHz power amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS process

A 30Mhz-3Ghz 1W Stacked-Fet GaAs MMIC Power Amplifier.

A CMOS 135–150 GHz 0.4 dBm EIRP transmitter with 5.1dB P1dB extension using IF envelope feed-forward gain compensation

A 206-264 GHz Power Amplifier Based on a High-Linearity Cascode Core With 15 dB Gain and 12.2-dBm P sat in 130-nm SiGe BiCMOS

32.4 A 67.8-to-108.2ghz Power Amplifier with a Three-Coupled-Line-Based Complementary-Gain-Boosting Technique Achieving 442ghz GBW and 23.1% Peak PAE

A 160 GHz High Output Power and High Efficiency Power Amplifier in a 130-Nm SiGe BiCMOS Technology

A 1V 32.1 dBm 92-to-102GHz Power Amplifier with a Scalable 128-to-1 Power Combiner Achieving 15% Peak PAE in a 65nm Bulk CMOS Process.

A 39 GHz Doherty-Like Power Amplifier With 22dBm Output Power and 21% Power-Added Efficiency at 6dB Power Back-Off

A 140- and 220-Ghz Dual-Band Amplifier in 130-Nm SiGe BiCMOS Process

A 22.8 GHz to 32.8 GHz Compact Power Amplifier with a 15 Dbm Output P1dB and 36.5% Peak PAE in 65-Nm CMOS.

A 28-Ghz Power Amplifier with Enhanced Back-Off Efficiency Based on 65-Nm CMOS Process

A Compact E-Band Load-Modulation Balanced Power Amplifier Using Coupled Transmission-Line Output Network Achieving 22.1-Dbm Psat and 34.9%/12.2% Efficiency at Psat/6-dB PBO

A 6.3 Dbm 258-314 GHz Power Amplifier Using a Broadband 8-Way SQWL Power Combiner in 130-Nm SiGe BiCMOS Technology

A Compact 140-Ghz CMOS Power Amplifier with 10.5-Dbm Output Power and 27.6-Db Power Gain Supporting Up to 128-QAM Modulation

A high efficiency 60GHz power amplifier in 90nm CMOS

A 1.5-to-23.5 GHz High-Power-Density Distributed PA Achieving 150.5 Gb/s Data Rate with 14.4 Dbm Pavg Supporting 64/128/256-QAM in 40-Nm CMOS

A 250–310 GHz Power Amplifier with 15-Db Peak Gain in 130-Nm SiGe BiCMOS Process for Terahertz Wireless System