A 180 GHz High-Gain Cascode Amplifier in 130-Nm SiGe Process

Xingcun Li,Wenhua Chen,Zhenghe Feng
DOI: https://doi.org/10.1109/imc-5g47857.2019.9160385
2019-01-01
Abstract:In this paper, a high-gain millimeter wave power amplifier is proposed, which adjusts the the inductive impedance at the base of common-base transistor and optimizes the cascode layout structure to reduce device parasitics. To enhance the power amplifier gain, the power amplification capability of transistor is fully utilized near the edge of the stable area. To demonstrate the feasibility of the proposed method, a 180 GHz single-stage cascode amplifier is designed in 130 nm SiGe technology. The fabricated amplifier has a maximum measured power gain of 10 dB at 180 GHz and 3-dB bandwidth of 20 GHz and The chip consumes 112 mW of power from a 4-V supply.
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