180 GHz high-gain cascode power amplifier in a 130 nm SiGe process

Xingcun Li,Wenhua Chen,Yunfan Wang,Zhenghe Feng
DOI: https://doi.org/10.1049/el.2019.4155
2020-01-01
Electronics Letters
Abstract:A positive feedback gain-enhanced technique for power amplifiers has been introduced in this Letter. With the proposed circuit design method for optimal inductive feedback, a 180 GHz high-gain single-stage cascode power amplifier in a 130 nm SiGe process is implemented. The measurement results show a power gain of 10 dB and 20 GHz bandwidth with 110 mW dc power are achieved, and 6.5 dBm of output power referred to P-1dB and 3.5% collector efficiency are attained. The chip area of the power amplifier is only 0.50 x 0.48 mm(2).
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