Abstract:High frequency intrinsic small-signal model parameter extraction for microwave SiGe heterojunction bipolar transistors is studied, with a focus on the main feedback elements including the emitter series resistor, internal and external base-collector capacitors as well as the base series resistor, all of which are important in determining the behavior of the device equivalent circuit. In accordance with the respective features of definition of the Y- and Z-parameters, a novel combined use of them succeeds in reasonably simplifying the device equivalent circuit and thus decoupling the extraction of base-collector capacitances from other model parameters. As a result, a very simple direct extraction method is proposed. The proposed method is applied for determining the SiGe HBT small-signal model parameters by taking numerically simulated Y- and Z-parameters as nominal “measurement data" with the help of a Taurus-device simulator. The validity of the method is preliminarily confirmed by the observation of certain linear relations of device frequency behavior as predicted by the corresponding theoretical analysis. Furthermore, the extraction results can be used to reasonably account for the dependence of the extracted model parameters on device geometry and process parameters, reflecting the explicit physical meanings of parameters, and especially revealing the distributed nature of the base series resistor and its complex interactions with base-collector capacitors. Finally, the accuracy of our model parameter extraction method is further validated by comparing the modeled and simulated S-parameters as a function of frequency.

Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements

Extraction of Emitter and Base Series Resistances of Bipolar Transistors from a Single DC Measurement

Novel Method to Determine Base Resistance in SiGe HBT HICUM Based on Rational Function Fitting

A New Procedure For Extraction Of Series Resistances For Bipolar Transistors From Dc Measurements

Energy Transport Model of Scaling SiGe HBT

Distributed Small-Signal Equivalent Circuit Model and Parameter Extraction for Sige HBT

Novel Method To Determine Base Resistance In Sige Hbt From Small-Signal S-Parameters Measurement

Small-signal Model Parameter Extraction for Microwave SiGe HBTs Based on Y- and Z-parameter Characterization

Novel analytical parameter extraction for SiGe HBTs based on the rational function fitting

Numerical Simulation and Analysis of SiGe HBT's Characteristic Parameters

Extraction of Temperature Dependences of Small-Signal Model Parameters in Sige Hbt Hicum Model

Design and Fabrication of High Speed NPN SiGe Heterojunction Bipolar Transistor

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Development of SiGe/Si Film Heterojunction Bipolar Transistors

Measurement of series resistances in polysilicon emitter bipolar transistor for high speed VLSI

Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation

Study on the Characteristics of the SiGe NPN HBT with Novel Structure

Development on Si/SiGe heterojunction bipolar transistors

Direct Analytical Parameter Extraction for Sige Hbts T-Topology Small-Signal Equivalent Circuit

The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's

Characterization of Neutral Base Recombination for SiGe HBTs