Energy Transport Model of Scaling SiGe HBT
LI Yao,LIU Rong-kan,FU Xiang-ning,XU Wan-jing
DOI: https://doi.org/10.3969/j.issn.0253-2778.2005.05.003
2005-01-01
Abstract:The model of SiGe HBT(heterojunction bipolar transistor) based on simplified energy transport equation is given and the exact solution of this equation is obtained,from which exact distributions of electron temperature in different regions of the miniature SiGe HBT can be seen.Firstly,the four chapters are as follows: Aiming at electric field distribution in the base and C-B junction,different methods are applied to the three subregions:neutral base,the base part of B-C junction and the collector part of B-C junction.Expressions of electric field are then obtained when assuming boron doping in the base is gaussian and germanium doping is linear.In addition,Ge-induced bandgap narrowing is considered.Secondly,built-in potential,neutral base width W_(Beff) and collector depletion width W_(dc) have been derived,then Boltzmann transport equation is founded taking into account Ge content influence.According to the boundary condition,different electron temperature distributions in different regions can be described.Exact solutions of these equations are obtained.Thirdly,the electron temperature curves under different base widths are given and those under different Ge gradients are compared.During their transitions,electron temperatures surpass by far the lattice temperature 300K.Maximum point of electron temperature can be expressed.Finally,the(foundation) for analyzing velocity overshoot effect is laid in(future) bipolar transistor.