Abstract:This research explores the architecture and efficacy of GaN/AlxGa1−xN-based heterojunction phototransistors (HPTs) engineered with both a compositionally graded and a doping-graded base. Employing theoretical analysis along with empirical fabrication techniques, HPTs configured with an aluminum compositionally graded base were observed to exhibit a substantial enhancement in current gain. Specifically, theoretical models predicted a 12-fold increase, while experimental evaluations revealed an even more pronounced improvement of approximately 27.9 times compared to conventional GaN base structures. Similarly, HPTs incorporating a doping-graded base demonstrated significant gains, with theoretical predictions indicating a doubling of current gain and experimental assessments showing a 6.1-fold increase. The doping-graded base implements a strategic modulation of hole concentration, ranging from 3.8 × 1016 cm−3 at the base–emitter interface to 3.8 × 1017 cm−3 at the base–collector junction. This controlled gradation markedly contributes to the observed enhancements in current gain. The principal mechanism driving these improvements is identified as the increased electron drift within the base, propelled by the intrinsic electric field inherent to both the compositionally and doping-graded structures. These results highlight the potential of such graded base designs in enhancing the performance of GaN/AlxGa1−xN HPTs and provide crucial insights for the advancement of future phototransistor technologies.

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Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Enhancing GaN/AlxGa1−xN-Based Heterojunction Phototransistors: The Role of Graded Base Structures in Performance Improvement

An enhanced model for InGaP/GaAs heterojunction bipolar transistor

Surface Recombination in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base

A Study of Frequency Response in Silicon Heterojunction Bipolar Transistors with Amorphous Silicon Emitters

Influence of Heterojunction Position on SiGe HBTs with Graded BC Junctions

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Current Gain Degradation Model of Displacement Damage for Drift BJTs

Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers

A Closed-Form Charge Control Model for the Threshold Voltage of Depletion- and Enhancement-Mode AlGaN/GaN Devices

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Analytical Modeling of Current Gain in Multiple-Quantum-Well Heterojunction Bipolar Light-Emitting Transistors

An improved model for InP/InGaAs double heterojunction bipolar transistors

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Modeling for the collector current in SOI gate-controlled hybrid transistor

Analytical models of the electric field and carrier transit time in the base of bipolar junction transistors

Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer