Abstract:High frequency intrinsic small-signal model parameter extraction for microwave SiGe heterojunction bipolar transistors is studied, with a focus on the main feedback elements including the emitter series resistor, internal and external base-collector capacitors as well as the base series resistor, all of which are important in determining the behavior of the device equivalent circuit. In accordance with the respective features of definition of the Y- and Z-parameters, a novel combined use of them succeeds in reasonably simplifying the device equivalent circuit and thus decoupling the extraction of base-collector capacitances from other model parameters. As a result, a very simple direct extraction method is proposed. The proposed method is applied for determining the SiGe HBT small-signal model parameters by taking numerically simulated Y- and Z-parameters as nominal “measurement data" with the help of a Taurus-device simulator. The validity of the method is preliminarily confirmed by the observation of certain linear relations of device frequency behavior as predicted by the corresponding theoretical analysis. Furthermore, the extraction results can be used to reasonably account for the dependence of the extracted model parameters on device geometry and process parameters, reflecting the explicit physical meanings of parameters, and especially revealing the distributed nature of the base series resistor and its complex interactions with base-collector capacitors. Finally, the accuracy of our model parameter extraction method is further validated by comparing the modeled and simulated S-parameters as a function of frequency.

Novel Method To Determine Base Resistance In Sige Hbt From Small-Signal S-Parameters Measurement

Novel Method to Determine Base Resistance in SiGe HBT HICUM Based on Rational Function Fitting

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

Small-signal Model Parameter Extraction for Microwave SiGe HBTs Based on Y- and Z-parameter Characterization

Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements

A Direct Parameter-Extraction Method for GaInP/GaAs Heterojunction Bipolar Transistors Small-Signal Model

Extraction of Temperature Dependences of Small-Signal Model Parameters in Sige Hbt Hicum Model

Distributed Small-Signal Equivalent Circuit Model and Parameter Extraction for Sige HBT

A Novel, Yet Direct, Parameter-Extraction Method for Heterojuction Bipolar Transistors Small-Signal Model

A Novel Direct Parameter-Extraction Method For Gainp/Gaas Hbts Small-Signal Model

A novel direct parameter-extraction method for GaInP/GaAs HBTs small-signal model: Research Articles

Direct Analytical Parameter Extraction for Sige Hbts T-Topology Small-Signal Equivalent Circuit

A New Extraction Method of GaN Switch-Hemt Small-Signal Model with Capacitance Scanning Algorithm

Optimized Compact Model and Parameter Extraction Method for SiGe HBT

An Approach to Determine and for InP HBT Using Cutoff Mode Measurement

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

Novel analytical parameter extraction for SiGe HBTs based on the rational function fitting

Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation

Extraction of Emitter and Base Series Resistances of Bipolar Transistors from a Single DC Measurement

A Base Transport Model for Ultra-Thin-base SiGe HBT