Optimized Compact Model and Parameter Extraction Method for SiGe HBT

CHEN Wei-wei,ZHOU Wei,LIU Dao-guang,XU Jun

2008-01-01

Abstract:By properly simplifying and optimizing MEXTRAM model,an optimized compact model and parameter extraction method for SiGe HBT is developed.Using this model and method,parameters of a microwave SiGe HBT are accurately extracted,and the disagreement between simulated result and measurement is less than 3%.

What problem does this paper attempt to address?

A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

Joachim N. Burghartz,Slobodan Mijalković,Hui-Chun Wu

2006-01-01

Abstract:In this paper, a unifled parameters extraction procedure for temperature and geometry scalable bipolar transistor model Mextram has been demonstrated using an example of high-speed SiGe HBT technology. The essential feature of the proposed methodology is a direct extraction of the temperature and geometry parameters from the measured electrical characteristics and the model parameters are extracted only once for a single reference temperature and geometry.
A New Extraction Method of GaN Switch-Hemt Small-Signal Model with Capacitance Scanning Algorithm

Jiashun Lang,Beibei Lv,Di Zhang,Yu Liu,PengFei Zhang,Jiongjiong Mo,Zhiyu Wang,Hua Chen,Faxin Yu

DOI: https://doi.org/10.1587/elex.21.20240348

2024-01-01

IEICE Electronics Express

Abstract:In this letter, a new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm is proposed. In the algorithm, the proportional relationship among intrinsic C gs , C gd and parasitic C g is scanned based on a simplified small-signal model without any approximations for capacitance. Comparing with the measured S parameters, optimized model parameters with the minimum error, especially the parasitic C g , are achieved without assistance of extra methods such as EM analysis. Using this method, the accurate small-signal model for a 0.25 mu m gate-length GaN switchHEMT up to 26.5GHz is extracted. This convenient method can be used for both GaN and GaAs switch-HEMT.
A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

Zhihao Lv,Zhiwei Xu,Ruirui Dang,Chunyi Song,Xiaopeng Yu

DOI: https://doi.org/10.1109/lmwc.2021.3128425

IF: 3

2022-01-01

IEEE Microwave and Wireless Components Letters

Abstract:A compact gate-width scalable model of dual-gate gallium arsenide pseudo high electron mobility transistors (GaAs pHEMTs) is proposed. We derive the model based on analytical formulation and represent it with a simplified circuit containing only eight elements. Compared with the dual-gate model using two separate devices, this modeling method is much simpler in characterization and can extract intrinsic parameters directly from two-port measurements. Extrinsic parameters are extracted by de-embedding method evolved from the conventional open-short method. Devices with different gate widths and numbers of finger are modeled to verify the scaling effect. The simulated results based on the proposed model agree with the measured results well up to 40 GHz for 0.25 mu m GaAs pHEMT devices. In addition, a large-signal model is built based on the proposed dual-gate model. A 2 GHz power amplifier was realized to illustrate the suitability of the proposed model for circuit design.
A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

Ruirui Dang,Lijie Yang,Zhihao Lv,Chunyi Song,Zhiwei Xu

DOI: https://doi.org/10.3390/electronics8030266

IF: 2.9

2019-01-01

Electronics

Abstract:Accurate large signal GaAs pHEMT models are essential for devices’ performance analysis and microwave circuit design. This, in turn, mandates precise small signal models. However, the accuracy of small signal models strongly depends on reliable parasitic parameter extraction of GaAs pHEMT, which also greatly influences the extraction of intrinsic elements. Specifically, the parasitic source and drain resistances, R s and R d , are gate bias-dependent, due to the two-dimensional charge variations. In this paper, we propose a new method to extract R s and R d directly from S-parameter measurements of the device under test (DUT), which save excessive measurements and complicated parameter extraction. We have validated the proposed method in both simulation and on-wafer measurement, which achieves better accuracy than the existing state-of-the-art in a frequency range of 0.5–40 GHz. Furthermore, we develop a GaAs pHEMT power amplifier (PA) to further validate the developed model. The measurement results of the PA at 9–15 GHz agree with the simulation results using the proposed model.
A Compact Model for Dual-Gate GaAs PHEMT and Application for Power Amplifier Design

Zhihao Lv,Zhiwei Xu,Chunyi Song

DOI: https://doi.org/10.1587/elex.18.20210268

2021-01-01

IEICE Electronics Express

Abstract:A compact model of the biased dual-gate GaAs pHEMT device is proposed. The biased dual-gate pHEMT is considered as one macro unit to simplify the model and facilitate simulation. We derive the model based on analytical formulation and represent it with a simplified circuit containing only eight elements. The extrinsic elements are extracted using improved open-short method with a larger frequency range than traditional method. The simulated S-parameters based on the proposed model agree with the measured results well up to 40 GHz for 0.25 um dual-gate GaAs pHEMT devices. In addition, the large-signal model is constructed with a new empirical drain current model. A 2.4 GHz power amplifier (PA) is designed using the proposed model, and the measurement results agree well with the simulation.
Small-signal Model Parameter Extraction for Microwave SiGe HBTs Based on Y- and Z-parameter Characterization

Fu Jun

DOI: https://doi.org/10.1088/1674-4926/30/8/084005

2009-01-01

Abstract:High frequency intrinsic small-signal model parameter extraction for microwave SiGe heterojunction bipolar transistors is studied, with a focus on the main feedback elements including the emitter series resistor, internal and external base-collector capacitors as well as the base series resistor, all of which are important in determining the behavior of the device equivalent circuit. In accordance with the respective features of definition of the Y- and Z-parameters, a novel combined use of them succeeds in reasonably simplifying the device equivalent circuit and thus decoupling the extraction of base-collector capacitances from other model parameters. As a result, a very simple direct extraction method is proposed. The proposed method is applied for determining the SiGe HBT small-signal model parameters by taking numerically simulated Y- and Z-parameters as nominal “measurement data" with the help of a Taurus-device simulator. The validity of the method is preliminarily confirmed by the observation of certain linear relations of device frequency behavior as predicted by the corresponding theoretical analysis. Furthermore, the extraction results can be used to reasonably account for the dependence of the extracted model parameters on device geometry and process parameters, reflecting the explicit physical meanings of parameters, and especially revealing the distributed nature of the base series resistor and its complex interactions with base-collector capacitors. Finally, the accuracy of our model parameter extraction method is further validated by comparing the modeled and simulated S-parameters as a function of frequency.
An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

yabin sun,jun fu,ji yang,jun xu,yudong wang,jie cui,wei zhou,zhang wei,zhihong liu

DOI: https://doi.org/10.1109/TMTT.2015.2468211

IF: 4.3

2015-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:An improved high-frequency small-signal model for SiGe HBTs under the off-state is presented in this paper. The proposed model takes into account the distribution characteristics of the intrinsic transistor, link base region under spacer, and extrinsic base-collector junction. The equivalent circuit for each region is separately derived using the transmission line equation with reasonable approxim...
Hybrid small-signal model parameter extraction for GaN HEMT-on-Si Substrates based on the SPF method

Peng Wei,Jiabin Deng,Wei Zhang,Jian Qin

DOI: https://doi.org/10.1007/s10825-024-02168-3

IF: 1.9828

2024-05-11

Journal of Computational Electronics

Abstract:This article proposes a parameter extraction method suitable for Si substrate based GaN HEMT small signal equivalent circuit models. The proposed method is based on a swarm intelligence optimization algorithm, which improves efficiency and accuracy by introducing a slope penalty factor (SPF) method for the objective function, rather than simply minimizing the error between simulation and measurement. By using PSO, WOA, and PNC-WOA for validation, we have demonstrated the advantages of the SPF method in extracting small signal parameters using swarm intelligence optimization algorithms. It is suitable for complex small-signal models that can describe the GaN HEMT-on-Si substrates, even if working up to 40 GHz.

engineering, electrical & electronic,physics, applied
Distributed Small-Signal Equivalent Circuit Model and Parameter Extraction for Sige HBT

Yabin Sun,Ziyu Liu,Xiaojin Li,Yanling Shi

DOI: https://doi.org/10.1109/access.2018.2879972

IF: 3.9

2019-01-01

IEEE Access

Abstract:In this paper, we present an improved high frequency small-signal distributed model for SiGe HBTs under forward-active mode based on the transmission line theory. The distributed nature of the transistor structure is taken into account in the proposed model. The single SiGe HBT is considered to be a cascade of many infinitesimal transistors, connected with the intrinsic base resistance. The closed-form solutions of admittance parameters for the distributed model are derived by solving the transmission line equation. With reasonable approximation and simplification, the model parameters are then directly extracted based on the nonlinear rational function fitting. The new improved distributed model and parameter extraction technique are validated with a $1\times 1.2\times 30\,\,\mu \text{m}^{2}$ SiGe HBT from 100 MHz to 20.89 GHz. The simulated $S$ -parameters in the proposed transmission line model are in close agreement with the measured data, and the frequency characteristics of the transistors are well predicted.
AModified GP large-signal model for InGaP/GaAs HBT and direct optimization extraction methodology

Ying Zhang,Miao Li,Yuxia Shi,Li Zhang,Yan, Wang

DOI: https://doi.org/10.1109/ICSICT.2010.5667720

2010-01-01

Abstract:A new extraction method for InGaP/GaAs HBTs based on direct optimization is proposed. Through modification of conventional GP formulation, the variations of transport saturation current and ideal forward transit time versus biases are incorporated into the compact model. Rather than intense and complicated iterative optimization, this new parameter extraction methodology realized the united optimization for DC and RF performances together for the first time. The new modeling approach is verified by comparing the simulated DC curves as well as S-parameter with the measured data of InGaP/GaAs HBT over wide frequency and bias ranges. The excellent results demonstrate the effectiveness of the modeling methodology for InGaP/GaAs HBTs.
Research on Parameter Extraction of GaN HEMT Equivalent Circuit Model Based on Genetic Algorithm

Limin Zhang,Tiancheng Zhang,Lin Wang,Huaguang Bao,Dazhi Ding

DOI: https://doi.org/10.1117/12.2624152

2022-01-01

Abstract:GaN, as the third generation semiconductor material, has attracted much attention because of its superior properties. The GaN equivalent circuit model is the basis of microwave device characteristics research and circuit design optimization. Fast extraction of circuit model parameters by optimization algorithm can accurately establish the device model. This paper presents an efficient genetic optimization algorithm to quickly extract GaN equivalent circuit parameters and obtain the optimal values of model parameters with ADS software. Considering the non-linearity in the large signal circuit model, based on the measured I-V and C-V characteristics curves under different bias voltage, the parameters in the non-linear model are extracted by using genetic algorithm, and the simulation results are compared with the measured results[3]. The comparison results are expressed in the range of 0.1~40GHz, and the model fits well. The accuracy of the proposed parameter optimization method is verified.
A Scalable Mextram Model for Advanced Bipolar Circuit Design

Hui-Chun Wu

2007-01-01

Abstract:In this thesis, a referenced based scaling approach and its parameter extraction for the bipolar transistor model Mextram is proposed. It is mainly based on the physical properties of the Mextram parameters, which scale with the junction temperature and geometry of the bipolar transistor. The scalable electrical parameter in the scaling rules is normalized to a reference parameter at reference temperature and geometry. The scalable model is implemented in AHDL Verilog-A language, which can be used in many commercial simulators. Along with the scalable model, a unified extraction procedure for temperature and geometry parameters of the scalable model has been implemented in an IC-CAP model file using an example of high-speed SiGe HBT technology as a case study. The essential feature of the extraction methodology is a direct extraction of the temperature and geometry parameters from the measured electrical characteristics. The electrical model parameters as the reference parameters are extracted only once for a single reference temperature and geometry. No additional tool for temperature and geometry parameter extraction is needed. As a result, the accuracy is improved and the scalable model library generation time is greatly reduced.
Extraction of Temperature Dependences of Small-Signal Model Parameters in Sige Hbt Hicum Model

Ya-Bin Sun,Jun Fu,Yu-Dong Wang,Wei Zhou,Wei Zhang,Zhi-Hong Liu

DOI: https://doi.org/10.1088/1674-1056/25/4/048501

2016-01-01

Abstract:In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature formulas for corresponding model parameters. The proposed method is validated by a 1 × 0.2 × 16 μm~2 SiGe HBT over a wide temperature range（from 218 K to 473 K）, and good matching is obtained between the extracted and modeled results. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.
Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

Wu Jianyu,Xu Mengdi,Zheng Yifei,Zhang Hongli,Xu Hao

DOI: https://doi.org/10.1587/elex.21.20230634

2024-01-01

IEICE Electronics Express

Abstract:Due to the low noise and high linearity characteristics of GaAs Hetero-junction Bipolar Transistors (HBTs), Low Noise Amplifiers (LNAs) are widely used in aerospace, communication, computer, and other fields. Extracting device model parameters is of great significance for subsequent research on the electromagnetic compatibility characteristics of such devices. In this paper, based on the small signal model, the model parameters of the amplifier are extracted by combining the I-V characteristics of the amplifier under different external voltage conditions. The linear model parameters are extracted using a fitting analysis method to obtain the Pspice circuit model of the GaAs amplifier under normal operating conditions. The simulation results align closely with the measured results. Compared with traditional modeling methods, this approach effectively resolves the issue of being unable to measure parameters due to chip packaging. This method holds substantial significance in extracting circuit model parameters and conducting in-depth research on circuit electromagnetic compatibility characteristics of this device.

engineering, electrical & electronic
Research on HVIGBT transient mixture model and parameter extraction method

gaohui feng,zhengming zhao,liqiang yuan,shiqi ji,jincheng zhao

DOI: https://doi.org/10.1109/ITEC-AP.2014.6940694

2014-01-01

Abstract:This paper presents a kind of HVIGBT transient mixture model and corresponding parameter extraction method. The HVIGBT model can divide into MOSFET and BJT two parts. The two models are formed respectively according to HVIGBT work principle, in addition, the carrier transport equations have been simplified for avoiding Kirk effect in BJT model. The transient model is realized in PSIM software in the paper. Extraction methods, which include estimation by empirical values, calculation by testing waveforms and comparison with same type models, are adopted in extracting model parameters. Through comparing testing and simulation waveforms, the model's simulation accuracy is proved.
A parameter extraction method for InP HBT small‐signal model considering emitter–collector laminated capacitance effect

Xiang Su,Shuman Mao,Yutong Wang,Min Tang,Bo Yan,Yuehang Xu

DOI: https://doi.org/10.1002/mop.34285

IF: 1.311

2024-08-18

Microwave and Optical Technology Letters

Abstract:The extraction of small‐signal parameters is of great importance for the modeling of InP heterojunction bipolar transistors (HBTs). This letter proposes an improved small‐signal parameter extraction method that considers both the emitter–collector capacitance effect and the current crowding effect. The corresponding parameter extraction procedure based on closed‐form equations is outlined. Furthermore, the model parameter extraction method is validated using two different‐sized InP HBT devices with multibias S‐parameters. The results demonstrate that the established small‐signal model exhibits greater than 90% accuracy across the frequency range of 1–110 GHz. In particular, in the high‐frequency band (above 50 GHz), the proposed model exhibits an improvement in accuracy of 7.4% after considering the emitter–collector capacitance and current crowding effects. This method can contribute to accurate modeling of the noise and large‐signal performance of InP HBT.

engineering, electrical & electronic,optics
A Compact Macromodeling Method for Characterizing Large-signal DC and AC Performance of InP and GaAs HBTs

Lin Cheng,Hongliang Lu,Yuming Zhang,Yimen Zhang

DOI: https://doi.org/10.5573/JSTS.2022.22.2.84

2022-01-01

Abstract:this paper, a compact macromodeling method for characterizing the large-signal characteristics of heterojunction bipolar transistors (HBTs) is proposed and successfully applied to describe the DC and AC performance of InP and GaAs HBT devices. Using the Symbolically-defined Device (SDD) technology, an empirical macro circuit preserving the Spice Gummel-Poon (SGP) intrinsic network and a simplified thermal network is established. The empirical current and charge functions are embedded in the SDD macro circuit network module. Compared with other large-signal models, the proposed model description and the relevant parameter extraction are relatively simpler, and at the same time, this method can maintain high fitting accuracy. To assess the validity and the accuracy of the proposed model, the compact large signal model is constructed for 1 ??m InP HBT and 1 ??m GaAs HBT. Based on the complete extraction of the model parameters, excellent consistency is obtained between the measured and modeled results.
Novel Method To Determine Base Resistance In Sige Hbt From Small-Signal S-Parameters Measurement

Yabin Sun,Jun Fu,Yudong Wang,Wei Zhou,Xiaojin Li,Yanling Shi

DOI: https://doi.org/10.1002/mop.30341

IF: 1.311

2017-01-01

Microwave and Optical Technology Letters

Abstract:A novel and robust method to determine the internal variable base resistance (R-B) of SiGe HBT from small-signal S-parameters measurement is developed in present work. The proposed method is adopted in two kinds of SiGe HBT compact models, MEXTRAM and HICUM. With the aid of auxiliary collector resistance, the lower and upper limits of R-B are built up and a narrow variation range of R-B is obtained. Thus, R-B can be directly estimated from the small-signal S-parameters measurement. The proposed method is successfully applied to several sizes of SiGe HBTs and the experiment results shows that average error between the lower and upper limits of R-B is less than 3% over a wide range of bias points, which can satisfy the demands of most engineering applications. Therefore, we believe that the proposed technique is a reliable routine applicable to estimate the base resistance in SiGe HBTs. (C) 2017 Wiley Periodicals, Inc.
Novel Method to Determine Base Resistance in SiGe HBT HICUM Based on Rational Function Fitting

Yabin Sun,Jun Fu,Ji Yang,Jun Xu,Yudong Wang,Wei Zhou,Wei Zhang,Jie Cui,Zhihong Liu

DOI: https://doi.org/10.1109/icsict.2014.7021629

2014-01-01

Abstract:An accurate and efficient base resistance (R-B) extraction methodology for SiGe HBT HICUM model is developed in this paper. Differing from previous methods, the proposed technique is based on the rational function fitting. Two formulas are used to determine the lower and upper limits of RB, and then RB is confined to a very narrow range and can be estimated analytically only from S-parameter data, without any special structures or numerical optimization. The proposed method is successfully applied to SiGe HBTs with different device geometries. Results demonstrate that the average error for extracted RB is less than 2.5% over a wide range of bias points. Therefore, we believe that the proposed technique is a reliable routine applicable to estimation of the base resistance for SiGe HBT HICUM model.
A Unified Electrothermal Behavior Modeling Method for Both SiC MOSFET and GaN HEMT

Xiao Long,Zhao Jun,Botao Zhang,Dongdong Chen,Wu Liang

DOI: https://doi.org/10.1109/tie.2020.3026283

IF: 7.7

2021-10-01

IEEE Transactions on Industrial Electronics

Abstract:This article has presented a unified electrothermal behavior modeling method for both silicon carbide (SiC) metal oxide semiconductor field effect transistor (mosfet) and gallium nitride (GaN) high electron mobility transistor (HEMT). The electrothemal behavior of these two kind of devices in both the first and the third quadrant is accurately modeled with serval compact equations. A modeling data and optimization algorithm-based parameter extraction method have been proposed to replace the previous time consuming and labor intensive one. The proposed parameter fitting algorithm is a genetic algorithm and Levenberg–Marquardt combined optimization algorithm possessing the advantages of global optimization and fast convergence speed, and modeling data can come from both datasheets and measurement. The correctness and accuracy of the proposed modeling method has been verified by simulation and experiment result. Meanwhile, it has been proved that the proposed modeling method is applicable to several commercially available SiC mosfets and GaN HEMTs.

automation & control systems,engineering, electrical & electronic,instruments & instrumentation

Optimized Compact Model and Parameter Extraction Method for SiGe HBT

A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

A New Extraction Method of GaN Switch-Hemt Small-Signal Model with Capacitance Scanning Algorithm

A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

A Compact Model for Dual-Gate GaAs PHEMT and Application for Power Amplifier Design

Small-signal Model Parameter Extraction for Microwave SiGe HBTs Based on Y- and Z-parameter Characterization

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Hybrid small-signal model parameter extraction for GaN HEMT-on-Si Substrates based on the SPF method

Distributed Small-Signal Equivalent Circuit Model and Parameter Extraction for Sige HBT

AModified GP large-signal model for InGaP/GaAs HBT and direct optimization extraction methodology

Research on Parameter Extraction of GaN HEMT Equivalent Circuit Model Based on Genetic Algorithm

A Scalable Mextram Model for Advanced Bipolar Circuit Design

Extraction of Temperature Dependences of Small-Signal Model Parameters in Sige Hbt Hicum Model

Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

Research on HVIGBT transient mixture model and parameter extraction method

A parameter extraction method for InP HBT small‐signal model considering emitter–collector laminated capacitance effect

A Compact Macromodeling Method for Characterizing Large-signal DC and AC Performance of InP and GaAs HBTs

Novel Method To Determine Base Resistance In Sige Hbt From Small-Signal S-Parameters Measurement

Novel Method to Determine Base Resistance in SiGe HBT HICUM Based on Rational Function Fitting

A Unified Electrothermal Behavior Modeling Method for Both SiC MOSFET and GaN HEMT