Abstract:An efficient and accurate knowledge-guided neural network (KGNN) modeling method for microwave active devices is proposed. The KGNN-based modeling method specifically constructs a hybrid combined objective function (COF) to constrain and guide neural network modeling, greatly improving modeling accuracy and consistency. In particular, the COF consists of the training error term, the prior knowledge term, and the regularization term. The proposed method can be directly used for large-signal modeling. To improve the modeling accuracy, the proposed method is used to model both the bias-and temperature-dependent isothermal nonlinear current and thermal factor, which is introduced to characterize the influence of the self-heating effect. The depletion capacitance and delay time parameters are also modeled with the proposed method. The base–collector and base–emitter charge formulations are obtained by integrating the corresponding depletion capacitances and delay times. An improved small-signal extraction method for III–V heterojunction bipolar transistors (HBTs) is used to obtain the extrinsic parameters. The developed large-signal model (LSM) is implemented in the advanced design system and fully verified by the small-and large-signal measurements. Good agreement is obtained between measured and simulated results.

AModified GP large-signal model for InGaP/GaAs HBT and direct optimization extraction methodology

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A large-signal model for GaInP/GaAs heterojunction bipolar transistors

Research on Parameter Extraction of GaN HEMT Equivalent Circuit Model Based on Genetic Algorithm

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An enhanced model for InGaP/GaAs heterojunction bipolar transistor

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A parameter extraction method for InP HBT small‐signal model considering emitter–collector laminated capacitance effect

An enhanced AlGaN/GaN HEMTs large-signal model with parameter extraction methodology

Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

Hybrid small-signal model parameter extraction for GaN HEMT-on-Si Substrates based on the SPF method

An Augmented Small-Signal Model of InP HBT with Its Analytical-Based Parameter Extraction Technique

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

An 1-4;nhanced AlGaN/GaN HEMTs Large-Signal Model with Parameter Fxtraction Methodology

A Knowledge-Guided Neural Network-Based Large-Signal Model for InP HBTs with Self-Heating Effect Consideration

A Verilog-A Large Signal Model for InP DHBT Including Thermal Effects