Abstract:An efficient and accurate knowledge-guided neural network (KGNN) modeling method for microwave active devices is proposed. The KGNN-based modeling method specifically constructs a hybrid combined objective function (COF) to constrain and guide neural network modeling, greatly improving modeling accuracy and consistency. In particular, the COF consists of the training error term, the prior knowledge term, and the regularization term. The proposed method can be directly used for large-signal modeling. To improve the modeling accuracy, the proposed method is used to model both the bias-and temperature-dependent isothermal nonlinear current and thermal factor, which is introduced to characterize the influence of the self-heating effect. The depletion capacitance and delay time parameters are also modeled with the proposed method. The base–collector and base–emitter charge formulations are obtained by integrating the corresponding depletion capacitances and delay times. An improved small-signal extraction method for III–V heterojunction bipolar transistors (HBTs) is used to obtain the extrinsic parameters. The developed large-signal model (LSM) is implemented in the advanced design system and fully verified by the small-and large-signal measurements. Good agreement is obtained between measured and simulated results.

A Verilog-A Large Signal Model for InP DHBT Including Thermal Effects

A large-signal model for GaInP/GaAs heterojunction bipolar transistors

A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

An improved model for InP/InGaAs double heterojunction bipolar transistors

A Compact Model for Dual-Gate GaAs PHEMT and Application for Power Amplifier Design

Efficient Thermal Analysis Method for Large Scale Compound Semiconductor Integrated Circuits Based on Heterojunction Bipolar Transistor

A Knowledge-Guided Neural Network-Based Large-Signal Model for InP HBTs with Self-Heating Effect Consideration

An improved VBIC model for InP DHBTs

An enhanced model for InGaP/GaAs heterojunction bipolar transistor

A Compact Macromodeling Method for Characterizing Large-signal DC and AC Performance of InP and GaAs HBTs

Self-Heating Effects of Vertical Gate-All-Around Transistors: Analysis and Modeling

A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT

An Accurate Large-Signal Model for Rf Soi Ldmos Including Self-Heating Effect

An Improved Large-signal Model of AlGaN/GaN HEMT Considering Self-heating Effect

Advanced Electro-Thermal Spice Modelling of Large Power Igbts

AModified GP large-signal model for InGaP/GaAs HBT and direct optimization extraction methodology

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.