Abstract:A new method to extract extrinsic base resistance and collector resistance is presented using cutoff mode measurement and open/short test structure without reference to numerical optimization. Good agreement is obtained between measured and modeled results for a 5x5 um2 InP HBT. I. INTRODUCTION Accurate extraction of small signal equivalent circuit of HBT is important for optimizing device performance. The numerical optimization can vary depending upon the optimization method and the starting values, and may result in nonphysical and non-unique values of the circuit elements. The analytical approach in HBT equivalent circuit parameter extraction has been addressed. Most of the direct extraction methods are based on certain assumptions and approximations (1-8). Due to the diversity of the process technology, device design, and geometry, these assumptions and approximations need to be modified and adjusted. In order to overcome these difficulties, an improved method for determining the InP HBT extrinsic elements is proposed in this paper. This method is a combination of the test structure and direct extraction methods. First, the PAD capacitances and series wire inductances can be extracted using normal open, short test structures, then the extrinsic resistances Rbx and Rc are obtained using cutoff mode S-parameter measurements (zero VCE, zero IC, variable VCB). The advantage of this procedure is that no assumptions and approximations are needed.

A New Procedure For Extraction Of Series Resistances For Bipolar Transistors From Dc Measurements

Extraction of Emitter and Base Series Resistances of Bipolar Transistors from a Single DC Measurement

A Procedure for Characterizing the BJT Base Resistance and Early Voltages Utilizing a Dual Base Transistor Test Structure

Extraction Of The Intrinsic Base Region Sheet Resistance In Bipolar Transistors

A New Test Structure For Parasitic Resistance Extraction In Bipolar Transistors

Measurement of series resistances in polysilicon emitter bipolar transistor for high speed VLSI

On Dc Modeling of the Base Resistance in Bipolar Transistors

Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements

A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

A New Test Structure for Direct Extraction of Spice Model Parameters for Double Polysilicon Bipolar Transistors

On Contact Resistance Measurement Using Four-Terminal Kelvin Structures in Advanced Double-Polysilicon Bipolar Transistor Processes

New RF intrinsic parameters extraction procedure for advanced MOS transistors

An Approach to Determine and for InP HBT Using Cutoff Mode Measurement

A Novel Method for Measuring Parasitic Resistance in High Electron Mobility Transistors

Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors

Novel Method to Determine Base Resistance in SiGe HBT HICUM Based on Rational Function Fitting

A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

Single-transistor method for the extraction of the contact and channel resistances in organic field-effect transistors

The Comparison of Various S/D Series Resistances Methods for Deeply Submicron MOSFETs

A New Method of Extrinsic Component Parameters Extraction for RF LDMOS Transistors