Abstract:In this paper, a method for the extrapolation of contact resistance in organic field-effect transistors (OFETs) from a single transfer characteristic curve in the linear regime is proposed. The method, namely DIrect Contact Resistance Extrapolation (DICRE), is based on the idea of making the current dependent only on contact resistance by setting the device in large over-threshold conditions. Constant contact resistance with respect to gate-to-source voltage is considered as an acceptable approximation, as confirmed by other examples in the literature. The effectiveness of the method is demonstrated by extrapolating the contact resistance of two different OFET structures (self-aligned and not self-aligned) and comparing the results with standard reference techniques, namely the Modified Transmission Line Method (M-TLM) and the Y function method. The results demonstrate that the DICRE method can be applied to low voltage devices without any damage to the gate insulator, even if the applied gate-to-source voltage drop is well beyond the values normally employed for transistor operation. The proposed method allows extrapolating a value of contact resistance comparable with the ones derived by TLM, with restrained variability. Moreover, the capability of properly recognizing the differences in contact resistance values between OFET structures with different features in terms of source/drain-gate overlap is reported. Finally, the possibility of correctly deriving the contact resistance dependence on drain-to-source voltage using DICRE is discussed.

Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors

The Comparison of Various S/D Series Resistances Methods for Deeply Submicron MOSFETs

A New Multi-Dose Method For Extracting Source/Drain Series Resistances Of Halo-Doped Mosfets

A Novel Method to Extract Channel Mobility and Parasitic Resistance of 2-D Material MOSFETs

New methods for the direct extraction of mobility and series resistance from a single ultra-scaled device

Modeling and separate extraction of bias-dependent and bias-independent S/D resistances in MOSFETs

An Accurate Parameter Extraction Method for RF LDMOSFET Small-Signal Model

A new small-signal parameter extraction approach for SOI MOSFET

Single-transistor method for the extraction of the contact and channel resistances in organic field-effect transistors

Parameter extraction of nano-scale MOSFET by a forward gated-diode method

New Method for Extraction of MOSFET Parameters

A method for direct contact resistance evaluation in low voltage coplanar organic field-effect transistors

Analytic subthreshold slope model for deep-submicrometer fully depleted SOI MOSFET's

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz

Analyzing Short Channel Effects in Deep Submicron MOSFET's Using Variational Method

New RF intrinsic parameters extraction procedure for advanced MOS transistors

Recessed source/drain for scaling SOI MOSFET to the limit

Linear Cofactor Difference Method of MOSFET Subthreshold Characteristics for Extracting Interface Traps Induced by Gate Oxide Stress Test

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Extraction Method of Interfacial Injected Charges for SiC Power MOSFETs