Abstract:The power metal-oxide-semiconductor field-effect transistor (MOSFET) is a critical device for power control and power conversion systems, the accurate calculation of static and dynamic behavior characteristics is an important prerequisite for system design optimization. The state-of-art modeling methods of power MOSFETs and their parasitic parameters focus on modeling and correction methods for the ontology. However, most of these methods are based on the design manual of MOSFETs, ignoring the influence of the manufacturing process on the behavior characteristics of MOSFETs, and the established static and dynamic behavior models have large deviations from the actual, which seriously affects the application of MOSFETs. To address this issue, this study proposes a physical information-based refined static and dynamic behavior modeling of the Power MOSFETs method. This paper completes the adjustment of the parameters of the power MOSFET model relying on physical information from real measurements. The static behavior is modelled through the voltage and current relationships under DC conditions. The dynamic behavior is modelled by the specific physical characteristics of the parasitic components. A double-pulse test circuit was built to test the device, and the results of the real measurements fit well with the simulation.

Modeling and separate extraction of bias-dependent and bias-independent S/D resistances in MOSFETs

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An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

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Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs

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A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

A Closed-Form Model for Position-Dependent Potential Across the Channel in DG-MOSFETs

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets

A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

Refined Electrical Modelling of Power MOSFETs Based on Physical Information

Source/Drain Series Resistances of Nanoscale Ultra-Thin-Body Soi Mosfets with Undoped or Very-Low-Doped Channel Regions

A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation