A New Test Structure for Direct Extraction of Spice Model Parameters for Double Polysilicon Bipolar Transistors

M Sanden,SL Zhang,JV Grahn,M Ostling

DOI: https://doi.org/10.1109/icmts.1999.766211

1999-01-01

Abstract:Direct extraction of ten core SPICE model parameters for double polysilicon bipolar junction transistors (BJT's) was performed using a new test structure. The test structure was basically identical to a real BJT, but without the intrinsic base. Hence, the extrinsic parasitics of the test structure were identical to the BJT. From the test structure small-signal model, all extrinsic model parameters were directly extracted from the measured scattering-parameters over the frequency range of 1 to 18 GHz. The values of the extracted parameters were in good agreement compared to those obtained using other conventional methods.