Abstract:A new method to extract extrinsic base resistance and collector resistance is presented using cutoff mode measurement and open/short test structure without reference to numerical optimization. Good agreement is obtained between measured and modeled results for a 5x5 um2 InP HBT. I. INTRODUCTION Accurate extraction of small signal equivalent circuit of HBT is important for optimizing device performance. The numerical optimization can vary depending upon the optimization method and the starting values, and may result in nonphysical and non-unique values of the circuit elements. The analytical approach in HBT equivalent circuit parameter extraction has been addressed. Most of the direct extraction methods are based on certain assumptions and approximations (1-8). Due to the diversity of the process technology, device design, and geometry, these assumptions and approximations need to be modified and adjusted. In order to overcome these difficulties, an improved method for determining the InP HBT extrinsic elements is proposed in this paper. This method is a combination of the test structure and direct extraction methods. First, the PAD capacitances and series wire inductances can be extracted using normal open, short test structures, then the extrinsic resistances Rbx and Rc are obtained using cutoff mode S-parameter measurements (zero VCE, zero IC, variable VCB). The advantage of this procedure is that no assumptions and approximations are needed.

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