Abstract:Silicon Carbide (SiC) is becoming increasingly of interest to the power electronics industry due to its superior characteristics such as high critical electric field, larger bandgap and higher thermal conductivity in comparison to Silicon (Si). Taking advantage of these material properties, high voltage devices could be fabricated with lower power losses and high temperature and frequency operability, which could surpass the limits enforced by Si power devices. SiC BJTs in particular are advantageous for the medium to high-voltage application range (e.g. HVDC multi-level converters) as they exhibit lower on-state losses while maintaining superior switching performance. The only drawback is being a current driven device in contrast to voltage-controlled SiC MOSFETs. Therefore, devices with a large current gain (β) are highly desirable for simplifying the base drive. In this paper, a novel circular structure with improved β has been demonstrated. Although the material quality of epilayers and surface passivation layer are the most significant factors limiting β, the geometrical design also plays a vital role in achieving a higher β. Therefore, the influence of the emitter geometry on β and the Rittner effect have been discussed by comparing rectangular and circular cell structures, with the aid of the software Sentaurus TCAD.

Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applications

Realizing Wide Bandgap P-SiC-emitter Lateral Heterojunction Bipolar Transistors with low collectoremitter offset voltage and high current gain - A novel proposal using numerical simulation

Schottky Collector Bipolar Transistor without Impurity Doped Emitter and Base: Design and Performance

A Study of Fast Switching, Anode Shorted Lateral Insulated Gate Bipolar Transistor

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain

The SCC BJT: a high-performance bipolar transistor compatible with high-density deep-submicrometer BiCMOS SRAM technologies

Bipolar Charge Plasma Transistor: A Novel Three Terminal Device

A Novel High Voltage SOI LIGBT with Split Gate and Carrier Stored Layer

Simulation Study of a Novel Thin Layer SOI Carrier-Stored TLIGBT with Self-Biased Pmos

Silicon Carbide Bipolar Junction Transistor with Novel Emitter Field Plate Design for High Current Gain and Reliability

Simulation Study of a Low ON-State Voltage Superjunction IGBT with Self-Biased PMOS

Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT with Embedded P-Type Schottky Barrier Diode

A polysilicon contacted subcollector BJT for a three-dimensional BiCMOS process

A Novel Diode-Clamped Carrier-Stored SOI Lateral Superjunction IGBT with Ultralow Turn-off Loss and Saturation Current

A Novel High Performance 6500V IGBT with P-type Schottky Contact

A Novel P-Ldmos Additionally Conducting Electrons by Control ICs

n channel SOI Schottky barrier tunneling transistors

An Ultralow Loss Superjunction Reverse Blocking Insulated-Gate Bipolar Transistor With Shorted-Collector Trench

Novel Lateral Igbt with N-Region Controlled Anode on Soi Substrate

Injection Enhanced SiC Planar Gate IGBT with Partial Schottky Contact Emitter

Fast speed lateral IGBT with Buried N-region Controlled Anode on SOI substrate