Abstract:A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison of the proposed structure with its equivalent Si lateral NPN BJT and an SiC emitter lateral NPN HBT is presented. Based on simulation results, the authors demonstrate for the first time that the proposed SiC emitter lateral NPM transistor shows superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect over its equivalent Si lateral NPN BJT and SiC emitter lateral NPN HBT. A simple fabrication process compatible with BiCMOS technology is also discussed.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to design a new type of SiC - emitter lateral NPM Schottky - collector bipolar transistor (SCBT) to achieve better electrical performance in VLSI (very - large - scale integration) applications. Specifically, the author hopes to overcome the limitations of traditional silicon - based and SiC - based bipolar transistors in terms of current gain, cut - off frequency, collector resistance, reverse recovery time and Kirk effect through this new structure. ### Main problems and solutions: 1. **Increase current gain and cut - off frequency**: - Traditional silicon - based lateral NPN bipolar transistors (BJTs) and SiC - emitter lateral NPN heterojunction bipolar transistors (HBTs) have deficiencies in high - current driving capabilities. - The new SiC - emitter lateral NPM SCBT achieves higher current gain and a higher cut - off frequency (\( f_T \)) through optimized structural design. 2. **Reduce collector resistance**: - Collector resistance is one of the key factors affecting transistor performance. Traditional transistors, due to their structural characteristics, are difficult to maintain low resistance at high currents. - The new SCBT significantly reduces the collector resistance by using metal as the collector, thereby improving the overall performance. 3. **Eliminate reverse recovery time**: - Reverse recovery time refers to the time required for a transistor to switch from the on - state to the off - state, which affects the switching speed and power loss. - The new SCBT has an almost zero reverse recovery time, which not only improves the response speed but also reduces the power loss during the switching process. 4. **Suppress Kirk effect**: - The Kirk effect refers to the phenomenon that when the collector - base voltage increases, the base current also increases, which is unfavorable for the stability of the transistor. - The new SCBT successfully suppresses the Kirk effect through optimized structural design, making the base current more stable. 5. **Adapt to high - temperature environments**: - SiC materials perform well in high - temperature environments due to their high thermal conductivity and high saturated electron drift velocity. - The new SCBT can maintain a relatively high current gain at temperatures as high as 400 K, and is suitable for applications in high - temperature environments. ### Conclusion: Through two - dimensional simulation results, the author has proven that the new SiC - emitter lateral NPM SCBT is superior to traditional silicon - based and SiC - based bipolar transistors in terms of current gain, cut - off frequency, reverse recovery time and Kirk effect. In addition, this structure also has a simple manufacturing process compatible with BiCMOS technology, making it an ideal choice for VLSI applications. ### Formula summary: - **Current gain**: \(\beta=\frac{I_C}{I_B}\) - **Cut - off frequency**: \(f_T = \frac{g_m}{2\pi C_{\pi}}\) - **Collector resistance**: \(R_C\) - **Reverse recovery time**: \(t_{rr}\) These improvements give the new SiC - emitter lateral NPM SCBT significant advantages in high - current - driving applications such as high - speed DAC/ADC converters.

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