Schottky Collector Bipolar Transistor without Impurity Doped Emitter and Base: Design and Performance

Kanika Nadda,M. Jagadesh Kumar

DOI: https://doi.org/10.1109/TED.2013.2272943

2013-08-20

Abstract:In this paper, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin SOI film. Using different metal work function electrodes, the electrons and holes are induced in an intrinsic silicon film to create the n emitter and the p base regions, respectively. Using two-dimensional device simulation, the performance of the proposed device has been evaluated. Our results demonstrate that the charge plasma based bipolar transistor with Schottky collector exhibits a high current gain and a better cut-off frequency compared to its conventional counterpart.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the difficulty of realizing a two - zone base structure in the ultra - thin silicon - on - insulator (SOI) layer for traditional lateral Schottky collector bipolar transistors (SCBT). Specifically, the traditional doping process is difficult to create an effective two - zone base structure in the ultra - thin SOI layer, which limits the improvement of device performance, especially the breakdown voltage and current gain.

To solve this problem, the author proposes an innovative Schottky collector bipolar charge - plasma transistor (SC - BCPT). In this transistor, metal electrodes with different work functions are used to induce electrons and holes in the undoped silicon thin film, thereby forming an "n" emitter and a "p" base. This design avoids the complexity and limitations of the traditional doping process and at the same time achieves higher current gain, cut - off frequency and better current - driving ability.

### Main problem summary:
1. **Limitations of traditional SCBT**: It is difficult to realize an effective two - zone base structure in the ultra - thin SOI layer, resulting in low breakdown voltage and limited current gain.
2. **Requirement for new device design**: A new device structure is needed that can improve current gain, cut - off frequency and breakdown voltage without relying on the traditional doping process.

### Solutions:
- **Design of SC - BCPT**: By using metal electrodes with different work functions, charge plasma is induced in the undoped silicon thin film to form an "n" emitter and a "p" base.
- **Performance improvement**: Verified by two - dimensional simulation, SC - BCPT shows significantly higher current gain (~13000 vs ~40), higher cut - off frequency (30.56 GHz vs 23.8 GHz) and better current - driving ability.

### Formulas and key parameters:
- **Current gain (β)**: \[ \beta=\frac{I_C}{I_B} \]
- **Cut - off frequency (f_T)**: \[ f_T = \frac{g_m}{2\pi C_{\pi}} \]
- **BVCEO·fT product**: \[ BV_{CEO}\cdot f_T \]

Through these improvements, SC - BCPT not only overcomes the limitations of traditional SCBT, but also shows more excellent performance, providing new ideas for future high - performance transistor design.