Abstract:A novel high-speed and process-compatible carrier-stored trench-gate bipolar transistor (CSTBT) combined with split-gate technology is proposed in this paper. The device features a split polysilicon electrode in the trench, where the left portion is equipotential with the cathode. This design mitigates the impact of the anode on the trench gate, resulting in a reduction in the gate-collector capacitance (CGC) to improve the dynamic characteristics. On the left side of the device cell, the P-layer, the carrier-stored (CS) layer and the P-body are formed from the bottom up by ion implantation and annealing. The P-layer beneath the trench bottom can decrease the electric field at the bottom of the trench, thereby improving breakdown voltage (BV) performance. Simultaneously, the highly doped CS layer strengthens the hole-accumulation effect at the cathode. Moreover, the PNP doping layers on the left form a self-biased pMOS. In a short-circuit state, the self-biased pMOS turns on at a certain collector voltage, causing the potential of the CS-layer to be clamped by the hole channel. Consequently, the short-circuit current no longer increases with the collector voltage. The simulation results reveal significant improvements in comparison with the conventional CSTBT under the same on-state voltage (1.48 V for 100 A/cm2). Specifically, the turn-off time (toff) and turn-off loss (Eoff) are reduced by 38.4% and 41.8%, respectively. The short-circuit current is decreased by 50%, while the short-circuit time of the device is increased by 2.46 times.

What problem does this paper attempt to address?

The paper proposes a novel high-speed split-gate trench carrier-stored trench-gate bipolar transistor (CSTBT) aimed at addressing two key challenges present in traditional CSTBTs: 1. **Electric Field Concentration Issue**: Traditional shielded-gate trench IGBTs (including CSTBTs) have an issue of excessive electric field concentration at the trench bottom, leading to early breakdown and thus weakening the device's breakdown voltage performance. Additionally, the breakdown characteristics of the device are highly sensitive to the trench depth and the doping concentration near the trench bottom. 2. **Dynamic Characteristics and Miller Effect**: Due to the Miller effect, the discharge process of the trench capacitor is usually the most energy-consuming part of the entire discharge process. This leads to a trade-off between the on-state voltage (V_on) and the turn-off loss (E_off). A deeper trench can increase the channel density in the on-state, achieving a smaller V_on, but it also significantly increases the gate-collector capacitance (C_GC), deteriorating the device's dynamic characteristics, including turn-off time (t_off) and E_off. To address the above issues, this paper designs a novel split-gate trench CSTBT and verifies it through numerical simulations. The design has the following features: - Split-Gate Structure: A split polysilicon electrode is set in the trench, with the left part being equipotential with the cathode and the right part serving as a conventional gate electrode. - P-layer, Carrier Storage (CS) Layer, and P-body: Formed from the bottom up through ion implantation and annealing. - In short-circuit conditions, the self-biased pMOS will turn on at a certain collector voltage, clamping the potential of the CS layer through the hole channel, thus preventing the short-circuit current from increasing with the collector voltage. Simulation results show that compared to traditional CSTBTs, the proposed novel split-gate CSTBT has the following advantages: - Turn-off time (t_off) and turn-off loss (E_off) are reduced by 38.4% and 41.8%, respectively. - Short-circuit current is reduced by 50%, and short-circuit time is increased by 2.46 times. - The introduction of a P-type buffer layer at the trench bottom helps reduce the impact ionization rate by about 70%, allowing for a more heavily doped CS layer, which reduces the on-state voltage without significantly affecting the breakdown capability. - Device performance is not affected by split-gate process deviations, showing high variability resistance. In summary, this paper aims to improve the dynamic characteristics and short-circuit tolerance of traditional CSTBTs by introducing a split-gate structure, thereby enhancing the overall performance of power electronic devices.

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