Abstract:A novel high-speed and process-compatible carrier-stored trench-gate bipolar transistor (CSTBT) combined with split-gate technology is proposed in this paper. The device features a split polysilicon electrode in the trench, where the left portion is equipotential with the cathode. This design mitigates the impact of the anode on the trench gate, resulting in a reduction in the gate-collector capacitance (CGC) to improve the dynamic characteristics. On the left side of the device cell, the P-layer, the carrier-stored (CS) layer and the P-body are formed from the bottom up by ion implantation and annealing. The P-layer beneath the trench bottom can decrease the electric field at the bottom of the trench, thereby improving breakdown voltage (BV) performance. Simultaneously, the highly doped CS layer strengthens the hole-accumulation effect at the cathode. Moreover, the PNP doping layers on the left form a self-biased pMOS. In a short-circuit state, the self-biased pMOS turns on at a certain collector voltage, causing the potential of the CS-layer to be clamped by the hole channel. Consequently, the short-circuit current no longer increases with the collector voltage. The simulation results reveal significant improvements in comparison with the conventional CSTBT under the same on-state voltage (1.48 V for 100 A/cm2). Specifically, the turn-off time (toff) and turn-off loss (Eoff) are reduced by 38.4% and 41.8%, respectively. The short-circuit current is decreased by 50%, while the short-circuit time of the device is increased by 2.46 times.

Design and Simulation of a Novel Gate Bipolar Transistor Device—FS-CIGBT

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

Analysis of Double Trench Insulated Gate Bipolar Transistor

The trench Insulated Gate Bipolar Transistor— a high power switching device

An Experimental And Numerical Investigation Of Igbt Blocking Characteristics

Optimum Design of 1.4kv Non-Punch-Through Trench Igbts: the Next Generation of High-Power Switching Devices

A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness

Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)

An On-State Analytical Model for the Trench Insulated Gate Bipolar Transistor (TIGBT)

A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V F·C res figure of merit

A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure

Voltage-Balanced Behavioral Model Considering Carrier Extraction Effect for Series-Connected Trench Gate FS-IGBTs

A novel active gate drive for HV-IGBTs using feed-forward gate charge control strategy

Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs

Design and Implementation of Reverse Conduction Trench FS IGBT

Design and Characterization of 10 kV High Voltage 4H-SiC p-Channel IGBTs with Low VF

A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material

Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect

A New Way to Break Through the Limitation of Cs-Layer Doping on the Breakdown Voltage of Cstbt: the Superjunction Solution

Study and Optimization of Field Limiting Rings for 10kV SiC Insulated Gate Bipolar Transistor