Abstract:Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm2 V-1 s-1 with an on/off ratio > 107 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits.

Collector compensative ion-implantation technology for polysilicon emitter transistors

A method to reduce process-related sensitivity in sub-threshold ICs and its circuit implementation

Research of Selectively Implanted Collector Technology

High-speed Polysilicon Emitter Bipolar Technologies

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An equivalent heterojunction-like model for polysilicon emitter bipolar transistor

Characterizations on the Doping of Single-Crystal Silicon Carbide

Investigation of the Doping Profile for Ion Implants and Rapid Annealing in Silicon Via an Improved Method

Super High Speed Polysilicon Emitter Integrated Circuit Technology

New Power-Lateral Double Diffused Metal-Oxide-Semiconductor Transistor with A Folded Accumulation Layer

Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers

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Very High Speed Poly-Si Emitter Bipolar Transistor and Circuit

Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

UHV/CVD i-Si epitaxy and ion implantation doping for sub-micrometer N -Collector of SiGeHBT

Influence of In-Situ Arsenic Doped Emitter Poly Process Conditions on RF-BiCMOS Device Parametrics

Analytical model of polysilicon emitter transistor

An Analytical Model for Determining Carrier Transport Mechanism of Polysilicon Emitter Bipolar-Transistors

The Effect of Emitter Overetch and Base Implantation Tilt on the Performance of Double Polysilicon Bipolar Transistors

Geometric Effect Elimination and Reliable Trap State Density Extraction in Charge Pumping of Polysilicon Thin-Film Transistors

Extraction Method of Interfacial Injected Charges for SiC Power MOSFETs