Abstract:As traditional CMOS is gradually approaching the limit of the bulk technology scaling, non-classical CMOS devices such as UTB-SOI, DG-MOSFET and MG structure provide a path to scale CMOS to the end of the Roadmap using new transistor structural designs. Compact modeling of such non-classical MOSFET devices calls for a fundamentally different approach from the conventional bulk CMOS because of the different device physics picture and unique physical effects in the new topology of the non-classical CMOS devices. This paper outlines the carrier-based approach: A generous strategy to develop the compact model of non-classical MOSFETs. It is shown that the carrier-based analytic models of UTB-SOI, DG and SRG MOSFETs can be developed in terms of the induced carrier concentration rather than the traditional surface potential or the charge variable. Based on an exact solution of the Poisson equation in various non-classical structures coupled to the Pao-Sah current formulation in terms of the carrier concentration, the different dependences of the surface potential, centric potential, inversion charge and the current on the silicon body thickness and the gate oxide are elucidated analytically and then the predicted IV characteristics are compared with the 2-D and 3-D numerical simulations. The analytical results of the model presented show in a good agreement with the numerical simulation, demonstrating the model is valid for all operation regions and traces the transition between them without any auxiliary variable and function

An Analytical Model for Determining Carrier Transport Mechanism of Polysilicon Emitter Bipolar-Transistors

Analytical model of polysilicon emitter transistor

Arrier Transport and Emitter Transit Lysilicon Emitter Bipular Transistors

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

A carrier-based analytic model for undoped surrounding-gate MOSFETs

Analytical theory for temperature characteristics of polysilicon emitter transistors (PET)

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

3-D Thermal-electronic Coupled Modeling of Microwave Band Power Transistor with Polysilicon Emitter Structure

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

An equivalent heterojunction-like model for polysilicon emitter bipolar transistor

An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional Solution

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

A Physical Model of Floating Body Effects in Polysilicon Thin Film Transistors

Carrier-Based Approach: A Generous Strategy to Develop Compact Model of Non-Classical CMOS

A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETs

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

A carrier-based analytic model for undoped Ultra-Thin-Body Silicon-on-insulator (UTB-SOI)MOSFETS

Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets

Polynomial-Effective-Channel-Mobility-Based Above-Threshold Current Model for Undoped Polycrystalline-Silicon Thin-Film Transistors Consistent with Pao–Sah Model