Abstract:Based on the comprehensive analytical model published, an analytical theory relating PET's current gain to temperature is proposed by introducing concerning parameters, particularly capture cross section of interfacial state at polysilicon-silicon interface, as a function of temperature. By using this theory, the effects of two transport mechanisms of minority carrier recombination at both sides of the interfacial oxide, and minority carrier over impurity segregation and interfacial oxide charge potential barrier by thermonic emission and tunneling through the interfacial oxide on PET's current gain variation in temperature are analyzed deeply. It is explained that HF device current gain shows more sensitive to temperature than the metal contacted conventional transistor at a higher temperature by the minority carrier recombination at both sides of the interfacial oxide and relation between capture cross section and temperature. The influence of the interfacial oxide break on RCA device temperature characteristics of current gain is predicted. Some conclusions advantageous to obtaining PET with the lower temperature sensitivity of current gain are presented.

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