Abstract:Utilizing the quantum and thermal energy of solar photons simultaneously to realize broad solar spectrum utilization, photon-enhanced thermionic emission (PETE) exhibits high photoelectric conversion efficiency (PCE) potential, with maximum theoretical efficiencies of 47% under 3000 suns and exceeds the Shockley-Queisser limit for an ideal single-junction solar cell. Mathematical models have been proposed in the literature to investigate its operation laws and evaluate its power potential, while some did not consider the conservation relationship of photon-absorption and electron-emission comprehensively and their simulation results may deviate obviously from the actual situation. Herein, we develop both two zero-dimensional (0-D) and one-dimensional (1-D) models with the correction for the photon-electron conservation relationship based on the basic models of PETE. The results demonstrate that the modified models possess better predictions for the thermal current (emission electron flow from the cathode induced by heat). Moreover, the unreasonable negative values of quantum efficiency (QE) and photoelectron concentration can be eliminated at high temperatures. Based on the improved models, PETE shows a wider selection of cathode semiconductor materials since the cathode temperature is lower due to the larger thermal current. The maximum PCE of the 0-D model is 37% with 1.04 eV electron affinity and extremely high solar concentration ratios. For a practical silicon cathode PETE device, it is preferable to operate it under 50 suns in photon-enhanced thermionic regime and the maximum PCE is less than 4.5% due to silicon's poor photon absorption property.

Analytical theory for temperature characteristics of polysilicon emitter transistors (PET)

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

An Improved Mathematical Model for the Photon-Enhanced Thermionic Emission (PETE) Device with an Emphasis on the Photon-Electron Conservation Relationship

An Analytical Model for Determining Carrier Transport Mechanism of Polysilicon Emitter Bipolar-Transistors

A New Meshing Criterion for the Equivalent Thermal Analysis of GaAs PHEMT MMICs.

Analytical model of polysilicon emitter transistor

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

Arrier Transport and Emitter Transit Lysilicon Emitter Bipular Transistors

An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional Solution

A Compact Model for Polysilicon TFTs Leakage Current Including the Poole–Frenkel Effect

Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

3-D Thermal-electronic Coupled Modeling of Microwave Band Power Transistor with Polysilicon Emitter Structure

Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Electro-Thermal Analytical Model and Simulation of the Self-Heating Effects in Multi-Finger 4H-Sic Power Mesfets

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model

A new analytical threshold voltage model for the doped polysilicon thin-film transistors

High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model

Accurate Modeling Of Phemt Output Current Derivatives Over A Wide Temperature Range

Study of Traps in Low-Temperature Polysilicon Thin Film Transistors Using a Current Transient Method