Abstract:A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge plasma layers on undoped SOI to form the emitter, base and collector regions of a lateral NPN transistor. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped lateral bipolar junction transistor with identical dimensions. Our simulation results demonstrate that the BCPT concept will help us realize a superior bipolar transistor in terms of a high current gain compared to a conventional BJT. This BCPT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets which are serious issues in ultra thin SOI structures.

What problem does this paper attempt to address?

The main problems that this paper attempts to solve are the doping problems faced by traditional bipolar junction transistors (BJTs) in the ultrathin silicon - on - insulator (SOI) structure, such as doping activation and high thermal budget problems. Specifically: 1. **Doping problems**: Traditional bipolar junction transistors need to form the emitter, base, and collector regions through ion - implantation doping. This will lead to difficulties in doping activation in the ultrathin SOI structure and requires high - temperature annealing treatment, increasing the complexity and cost of the manufacturing process. 2. **High thermal budget**: In the manufacturing process of traditional BJTs, especially in the annealing step after ion - implantation in the emitter and base regions, high - temperature treatment is required. This poses a challenge to the integration with the CMOS process because high temperature may damage the performance of CMOS devices. To solve these problems, the author proposes a new three - terminal device - **Bipolar Charge Plasma Transistor (BCPT)**. This transistor uses metal electrodes with different work functions to induce the formation of n - type and p - type charge plasma layers on the undoped SOI layer, thereby achieving the functions of the emitter, base, and collector regions without ion - implantation doping. Through two - dimensional simulation, the author shows that the BCPT has current - gain characteristics significantly superior to those of traditional BJTs and avoids the complex thermal budget problems caused by doping. In addition, the concept of BCPT can also be applied to other materials (such as SiC) or heterojunction bipolar transistors, and can even be extended to undoped silicon nanowire structures to adapt to future nanowire - and FinFET - based CMOS technologies. In summary, this paper aims to explore a new transistor structure to overcome the doping and thermal budget problems of traditional BJTs in the ultrathin SOI structure, while providing higher current gain and a simpler manufacturing process.

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