Abstract:Two-dimensional (2D) InSe-based field effect transistor (FET) has shown remarkable carrier mobility and high on-off ratio in experimental reports. Theoretical investigations also predicated the high performance can be well preserved at sub-10 nm nodes in the ballistic limit. However, both experimental experience and theoretical calculations pointed out achieving high-quality ohmic has become the main limiting factor for high-performance 2D FET. In this work, we proposed a new sandwiched ohmic contact with indium for InSe FET and comprehensively evaluated its performance from views of material and device based on ab initio methods. The material properties denote that all of fundamental issues of ohmic contact including tunneling barrier, the Schottky barrier, and effective doping are well concerned by introducing the sandwiched structure, and excellent contact resistance was achieved. At device performance level, devices with gate length of 7, 5, and 3 nm were investigated. All metrics of sandwiched contacted devices far exceed requirement of the International Technology Roadmap for Semiconductors (ITRS) and exhibit obvious promotion as compared to conventional structures. Maximum boost of current with 69.4%, 50%, and 49% are achieved for devices with 7, 5, and 3 nm gate length, respectively. Meanwhile, maximum reduction of the intrinsic delay with 20.4%, 16.7%, and 18.9% are attained. Moreover, a benchmark of energy-delay product (EDP) against other 2D FETs is presented. All InSe FETs with sandwiched ohmic contact surpass MoS2 FETs as well as requirement from ITRS 2024. The best result approaches the upper limit of ideal BP FET, denoting superior preponderance of sandwiched structures for InSe FETs in the next generation of complementary metal-oxide semiconductor (CMOS) technology.

Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts

Drain Self-Blocking Ambipolar Transistors for Complementary Circuit Applications

Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters

Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance

H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors

Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

2D Materials As Semiconducting Gate for Field-Effect Transistors with Inherent Over-Voltage Protection and Boosted ON-current

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

High-performance Ambipolar Field-effect Transistors with Ph-BTBT-10/PMMA/ZnO structure

High-Performance Complementary Circuits from Two-Dimensional MoTe 2

The Ambipolar Evolution of a High-Performance WSe2 Transistor Assisted by a Ferroelectric Polymer.

Yttrium-induced phase-transition technology for forming perfect ohmic contact in two-dimensional MoS2 transistors

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

Ambipolar 2D Semiconductors and Emerging Device Applications

Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits

Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Fermi-Level Pinning-Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits

High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study