Abstract:We report a novel method to reduce the collector-emitter offset-voltage of the wide bandgap SiC-P-emitter lateral HBTs using a dual-bandgap emitter. In our approach, the collector-emitter offset-voltage VCE(offset) is reduced drastically by eliminating the built-in potential difference between the emitter-base (EB) junction and collector-base (CB) junction by using a SiC-on-Si P-emitter. We demonstrate that the proposed dualbandgap P-emitter HBT together with the SiGe base and Schottky collector, not only has a very low VCE(offset) but also exhibits high current gain, reduced Kirk effect, excellent transient response and high cutoff frequency. We evaluated the performance of the proposed device in detail using two dimensional device simulation and a possible BiCMOS compatible fabrication procedure is also suggested.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to reduce the collector - emitter offset voltage (VCE(offset)) of wide - band - gap SiC - emitter PNP lateral heterojunction bipolar transistors (HBTs) and achieve high current gain**. Specifically, wide - band - gap SiC - emitter PNP HBTs exhibit a large collector - emitter offset voltage in many digital applications, which limits their performance and application range. The paper proposes a novel method to significantly reduce this offset voltage by using a dual - band - gap emitter (an emitter region composed of SiC and Si), while maintaining a high current gain. In addition, the paper also explores the possibility of further improving device performance by using a SiGe base region and a Schottky collector, and verifies the effectiveness of these improvements through numerical simulations. ### Key Problem Summary: 1. **Excessively large collector - emitter offset voltage (VCE(offset))**: Due to the large built - in potential difference between the emitter - base (EB) and base - collector (BC) junctions, wide - band - gap SiC - emitter PNP HBTs have a high VCE(offset), which affects their application in digital circuits. 2. **Low current gain**: The current gain of traditional wide - band - gap SiC - emitter PNP HBTs is low, especially after the introduction of the Si layer, the current gain will further decrease. 3. **High collector resistance**: Due to the low hole mobility, traditional PNP HBTs have a high collector resistance. ### Solutions: 1. **Dual - band - gap emitter**: By introducing a thin Si layer in the emitter region, the built - in potential difference between the emitter - base and base - collector junctions can be eliminated, thereby significantly reducing VCE(offset). 2. **SiGe base region**: The introduction of a SiGe base region can improve the emitter injection efficiency, thereby restoring the current gain. 3. **Schottky collector**: Using a Schottky contact as a collector can further improve the transient response and cutoff frequency of the device, reducing the base storage time and collector resistance. Through these improvements, the paper shows that the proposed structure has potential in BiCMOS applications and can achieve performance comparable to that of NPN HBTs.

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