Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device
Li Lu,Zhihan Zhu,Yixin Dai,Siyang Liu,Weifeng Sun,Long Zhang,Feng Lin,Jinyu Xiao,Jun Sun
DOI: https://doi.org/10.1109/ted.2023.3298751
IF: 3.1
2023-08-25
IEEE Transactions on Electron Devices
Abstract:In our work, the reliabilities and inner mechanisms of the high-voltage silicon-on-insulator lateral insulated gate bipolar transistors (SOI-LIGBTs) have been investigated comprehensively under the repetitive electrostatic discharge (ESD) stresses for better application on the high-voltage circuits. The worst repetitive ESD stress occurs when the SOI-LIGBT is getting snapback with the turn- ON of the parasitic transistor. In the worst transmission line pulse (TLP) stress I, the ON-state voltage ( ) and collector-to-emitter current density ( ) are decreased as the stressing times. The decreased is attributed to the hot-hole injection at the gate plate edge, while the decreased is attributed to the interface states generation at the gate plate edge and collector plate edge. The decrease is better for SOI-LIGBT, but the decreased is the opposite. To restrain the degradation, the P-top layer structure has been proposed and fabricated with the same mask of the P-body. Then, the measured degradation shows effective improvement of the proposed device due to its remarkable weakness for the hot-carrier effects.
engineering, electrical & electronic,physics, applied