Thick Silicon Membrane Technology for Reliable and High Performance Operation of High Voltage LIGBTs in Power ICs

T. Trajkovic,F. Udrea,C. Lee,N. Udugampola,V. Pathirana,A. Mihaila,G. A. J. Amaratunga

DOI: https://doi.org/10.1109/ispsd.2008.4538965

2008-01-01

Abstract:A step change in performance and reliability of thick SOI membrane devices compared to earlier generation of devices on ultra-thin SOI membranes is reported in here. The membrane concept first reported offered a landmark improvement in the trade-off between switching losses and breakdown capability (in excess of 700V) but its current capability was limited by the thickness of the silicon membrane (around 30 A/cm2 for LIGBTs on 0.25 mum silicon membranes, achieving a loss related power density approaching 100 W/cm2 ). This paper reports on membrane power devices with current densities which approach the best of those offered by vertical devices (current density greater than 100 A/cm with power density of 180 W/cm2 ), without sacrificing switching speed (toff < 60 ns for 1.5 mum membranes). HTRB results showing 1000 h+ operation at 125degC at 80% of the rated voltage are also presented. Finally, it is shown that both the static and dynamic high temperature operation of thick membrane LIGBTs is superior to that of state-of-the-art integrated LDMOSFETs.