Abstract:This article presents an enhanced physical SPICE model for insulated gate bipolar transistor (IGBT) modules, grounded in a two-dimensional charge distribution. The model accurately delineates the lateral charge distribution under both static conduction and transient conditions, providing a precise representation of the PNP and PIN components of the IGBT. The improved model more effectively describes current distribution and clarifies parasitic effects, such as latch-up phenomenon. Furthermore, a negative carrier lifetime near the gate is introduced in accordance with the carrier movement direction, resulting in a catenary charge distribution in the PIN segment of the IGBT. This aligns closely with the technology computer-aided design (TCAD) results. Notably, the carrier concentration in the N-base region significantly escalates under high-level injection conditions. The model incorporates an N+N- junction and a P+N- junction within the channel to portray the carrier concentration variation during the transient state, also factoring in the effect of temperature on the IGBT characteristics. Implemented in PSPICE, the model's findings are compared with TCAD outcomes and experimental data. These comparisons illustrate that the proposed model precisely delivers the charge distribution, as well as dynamic/static characteristics and unbalanced current in parallel devices of the IGBT.

2D Simulation of a SiGe HBT Based on Energy Balance Model

Simulation of III-V HEMTs for High-speed Low-power Logic Applications

A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Numerical Simulation and Analysis of SiGe HBT's Characteristic Parameters

Full Geometric Simulation of Miniaturized GaN Double-Heterojunction High Electron Mobility Transistors by a Multiscale Approach Coupling Quantum and Semi-Classical Transport

Numerical analysis of heterostructure semiconductor devices

Simulation of Carrier Transport in Heterostructures Using the 2d Self-Consistent Full-Band Ensemble Monte Carlo Method

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Simulation and Analysis of Inverse-Mode Operation of Single Event Transient Mechanisms on NPN-SiGe HBT

Simulation of band-to-band tunneling in Si/Ge and Si/Si 1-xGex heterojunctions by using Monte Carlo method

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Development on Si/SiGe heterojunction bipolar transistors

A large-signal model for GaInP/GaAs heterojunction bipolar transistors

Modeling and Analysis of IGBT Based on Two-Dimensional Charge Distribution

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment*

Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT

Study of carrier transport through GexSi1−x/Si heterojunctions by using 2D Monte Carlo simulation method

Simulation of spin-polarized transport in SiGe/Ge/SiGe geterostructure

An enhanced model for InGaP/GaAs heterojunction bipolar transistor

Electro-thermal characterization of Si-Ge HBTs with pulse measurement and transient simulation