Abstract:Stress resulting from mismatch between a substrate and an adsorbed material has often been thought to be the driving force for the self-assembly of nanoscale structures. Bi nanolines self-assemble on Si(001), and are remarkable for their straightness and length -- they are often more than 400 nm long, and a kink in a nanoline has never been observed. Through electronic structure calculations, we have found an energetically favourable structure for these nanolines that agrees with our scanning tunneling microscopy and photoemission experiments; the structure has an extremely unusual subsurface structure, comprising a double core of 7-membered rings of silicon. Our proposed structure explains all the observed features of the nanolines, and shows that surface stress resulting from the mismatch between the Bi and the Si substrate are responsible for their self-assembly. This has wider implications for the controlled growth of nanostructures on semiconductor surfaces.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the microscopic mechanism of self - assembly and the structural characteristics of bismuth (Bi) nanowires on the silicon (Si(001)) surface. Specifically, the researchers hope to understand the following issues: 1. **The role of surface stress**: Whether the surface stress caused by the lattice mismatch between the substrate and the adsorbed material is the main driving force for the self - assembly of bismuth nanowires. 2. **The unique properties of nanowires**: Bismuth nanowires exhibit extremely high straightness and length (usually more than 400 nanometers), and no bending or defects have been observed. How are these unique properties formed? 3. **Determination of the microstructure**: What is the specific atomic structure of bismuth nanowires? How does this structure explain its unique physical and chemical properties? To answer these questions, the authors carried out electronic structure calculations and combined scanning tunneling microscopy (STM) and photoemission experiments to propose a new structural model that can explain all the observed features. This model not only has lower energy but also is highly consistent with the experimental results. ### Main findings 1. **New structural model**: - A new structural model is proposed, which contains a binuclear structure composed of 7 - membered rings and is located below the silicon surface. This structure can well explain the stability of bismuth nanowires, the alignment relationship with silicon dimers, the straightness, and the ability to repel defects. 2. **The influence of surface stress**: - Research shows that the release of surface stress is the main driving force for the self - assembly of bismuth nanowires. In particular, the tensile strain field in this structure can effectively repel defects and help maintain the straightness and stability of nanowires. 3. **Experimental verification**: - The proposed structural model is verified by high - resolution STM images and photoemission spectroscopy experiments. In particular, the characteristic spacing shown in the STM images is 6.3 Å, which is very consistent with the theoretical calculation results. ### Formula representation - **Energy difference**: \[ E_{\text{new}}=- 10.9\,\text{eV/Bi dimer} \] This is 0.25 eV/Bi dimer lower than the Bi-(2×n) phase with high coverage. - **Curvature energy**: \[ E_{\text{kink}} = 3.75\,\text{eV/kink} \] - **Endpoint energy**: \[ E_{\text{end}}=2.6\,\text{eV/line end} \] ### Conclusion In conclusion, this paper successfully explains the unique properties of bismuth nanowires self - assembled on the silicon surface by proposing and verifying a new structural model. This finding not only deepens the understanding of the self - assembly mechanism of nanostructures at the nanoscale but also provides an important theoretical basis for the future design and control of nanostructures on semiconductor surfaces.

Stress relief as the driving force for self-assembled Bi nanolines

Dynamically Regulated Ag Nanowire Arrays for Detecting Molecular Information of Substrate‐Induced Stretched Cell Growth

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Growth Of Metal And Metal Oxide Nanowires Driven By The Stress-Induced Migration

Stress-induced Ordering Evolution of 1D Segmented Heteronanostructures and Their Chemical Post-Transformations

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Rolling Structure from Bilayer Nanofilm by Mismatch

Non-uniaxial Stress-Assisted Fabrication of Nanoconstriction on Vertical Nanostructured Si.

Stability of Sb Line Structures on Si(001)

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Bistability Of Nanoscale Ag Islands On A Si(111)-(4 X 1)-In Surface Induced By Anisotropic Stress

Nanotube formation from a self-curling nanofilm driven by surface stress: a core-surface model

Space Confinement and Rotation Stress Induced Self-Organization of Double-Helix Nanostructure: A Nanotube Twist with A Moving Catalyst Head

Stress Anisotropy Controlled Morphological Evolution in Core–shell Nanowires

Structural Evolution of the Silicon Nanowire Via Molecular Dynamics Simulations: the Double-Strand Atomic Chain and the Monatomic Chain

A Shear Stress Regulated Assembly Route to Silica Nanotubes and Their Closely Packed Hollow Mesostructures

Nanomaterials under Stress: A New Opportunity for Nanomaterials Synthesis and Engineering.

Nanostructure Self-Organization by Controlling Surface and Interface Strain

Strain-Mediated Patterning of Surface Nanostructure by the Subsurface Island Array

Direct atomic-scale imaging about the mechanisms of ultralarge bent straining in Si nanowires.