Excelling under strain: band engineering in nanomaterials
Anna Demming
DOI: https://doi.org/10.1088/0957-4484/24/33/330201
IF: 3.5
2013-07-26
Nanotechnology
Abstract:A little stress or strain has been known to improve the performance of athletes, actors and of course nanomaterials alike. In fact strain in silicon is now a major engineering tool for improving the performance of devices, and is ubiquitously used in device design and fabrication. Strain engineering alters a material's band structure, a model of electron behaviour that describes how as atoms come together in a solid, their discrete electron orbitals overlap to ultimately give rise to bands of allowed energy levels. In a strained crystal lattice of silicon or silicon germanium the distance between atoms in the lattice is greater than usual and the bands of allowed energy levels change. This July marks 100 years since Bohr submitted his paper 'On the constitution of atoms and molecules' [1] where he describes the structure of the atom in terms of discrete allowed energy levels. The paper was a seminal contribution to the development of quantum mechanics and laid the initial theoretical precepts for band gap engineering in devices. In this issue Nrauda and a collaboration of researchers in Europe and Australia study the growth of defect-free SiGe islands on pre-patterned silicon [2]. They analyse the strain in the islands and determine at what point lattice dislocations set in with a view to informing implementation of strain engineering in devices. The effects of strain on band structure in silicon and germanium were already studied and reported in the 1950s [3, 4]. Since then the increasing focus on nanoscale materials and the hunger for control of electronic properties has prompted further study of strain effects. The increased surface area to volume ratio in nanostructures changes the strain behaviour with respect to bulk materials, and this can also be exploited for handling and fine tuning strain to manipulate material properties. It is perhaps no surprise that graphene, one of the most high-profile materials in current nanotechnology research, has attracted interest in strain studies as well. Researchers in China investigated the effects of tensile strain on the thermal conductivity of graphene nanoribbons. Tuning the thermal conductivity of nanomaterials is highly desirable to optimize their functionality [5]. Wei and colleagues use computer simulations based on reverse nonequilibrium molecular dynamics (RNEMD) to demonstrate what they describe as 'a strain-induced magic flexibility of thermal engineering for carbon-based nanostructures', which may provide a new approach for tailoring nanomaterial functionality. Despite the attractions of more recently discovered carbon nanomaterials silicon remains the bedrock of the semiconductor device industry. Germanium nanostructures also hold significant interest, such as Ge nanowires, which have high mobility and a conveniently low synthesis temperature [6]. In fact the potential applications of germanium nanowires in field effect transistors and nanobridge devices prompted Jagadish and colleagues in Australia, Korea and the UK to investigate the growth of taper-free kinked Ge nanowires in silicon [7]. As they point out many recent reports have highlighted such kinked nanowires as valuable components for novel nanodevices. The work reported by Hrauda and colleagues in this issue looks at the growth of germanium islands on a silicon substrate rather than nanowires [2]. They grow islands on pre-patterned silicon with different levels of Ge deposition with the aim of better understanding how to manage the effects of strain due to lattice mismatch between the two metals. Their results show that considerably more Ge can be deposited without dislocations forming than previously thought and reveal a distinctive cycle of changing island morphologies as Ge is deposited. They add, 'Strain relaxation is revealed to be the main driving force of a rather complex evolution of island shape and Ge distribution'. In reference to his theory of atoms Bohr is once said to have told Werner Heisenberg, 'We must be clear that when it comes to atoms, language can be used only as in poetry. The poet, too, is not nearly so concerned with describing facts as with creating images and establishing mental connections' [8]. Images have been central to the communication and description of the Bohr–Rutherford model described in 1913, yet the paper itself uses none, and is typical of scientific communications at the time. In fact the text itself makes an eloquent redundancy of accompanying figures but it is interesting to note in comparison with the more technologically advanced channels for current science communications that are so thankfully profuse in images and multimedia. Obviously there is now much more experimental work on systems at the nanoscale and below than a hundred years ago and this also contributes to the greater wealth of images in today's reports. The report by Nrauda and colleagues in this issue is a great example with a wide range of annotated atomic force and transmission electron microscope images, reciprocal space maps and line plots, each image speaking a thousand words and communicating the results with an immediacy that outstrips any narrative. Yet the text serves an indispensable function in relaying the insights derived from analysis of the data, suggesting growth mechanisms, driving forces and expanding the existing understanding of these systems—as Bohr might put it, adding the poetry. References [1] Bohr N 1913 On the constitution of atoms and molecules Phil. Mag 26 1 [2] Hrauda N, Zhang J J, Groiss H, Etzelstorfer T, Holý V, Bauer G, Deiter C, Seeck O H and Stangl J 2013 Strain relief and shape oscillations in site-controlled coherent SiGe islands Nanotechnology 24 335707 [3] Hall H H, Bardeen J and Pearson G L 1951 The effects of pressure and temperature on the resistance of p–n junctions in germanium Phys. Rev. 84 129–32 [4] Smith C S 1954 Piezoresistance effect in germanium and silicon Phys. Rev. 94 42–9 [5] Wei N, Xu L, Wang H-Q and Zheng J-C 2011 Strain engineering of thermal conductivity in graphene sheets and nanoribbons: a demonstration of magic flexibility Nanotechnology 22 105705 [6]Berbezier I, Ronda A and Portavoce A 2002 SiGe nanostructures: new insights into growth processes J. Phys.: Condens. Matter 14 8283 [7] Kim J H, Moon S R, Kim Y, Chen Z G, Zou J, Choi D Y, Joyce H J, Gao Q, Tan H H and Jagadish C 2012 Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process Nanotechnology 23 115603 [8] Steve G 1993 Theorizing Modernism: Essays in Critical Theory (Routledge: Talyor and Francis) p 28
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology