Abstract:Based on first-principles calculations, we have systematically investigated the electrical transport properties of a Ge-7 cluster, which is respectively coupled with two kinds of atomic scale Ag(110) and Ag(100) electrodes with finite cross sections. Our results clearly suggest that, under strong cluster-electrode coupling, the equilibrium conductance of the Ge-7 cluster coupled with thin Ag nanowires takes the value of about 3 and 4 (units of G(0)=2e(2)/h) in the case of Ag(110) and Ag(100), respectively. The eigenchannel and electronic structure analyses show that, in the strong cluster-electrode coupling regime, the transport properties of Ge-7 cluster connected to thin Ag wires are very closely related to the band structure of the nanowire electrode in both equilibrium and nonequilibrium situations. Under zero bias, the number of the electrode bands crossing the Fermi level determines the number of conductance channels of the Ge-7 cluster. Therefore, for the Ag(100) electrode case, more bands crossing the Fermi energy results in a larger conductance than that in the Ag(110) case. By varying the cluster-electrode contact distances, we observe that the equilibrium conductance of the Ge-7 cluster in contact with the Ag(100) electrode is larger than that in the case of the Ag(110) electrode for most of investigated contact distances. With the bias voltage applied, our results also elucidate that there also exists a close correlation between the nonequilibrium properties of this cluster and the band matching between left and right electrodes in these two cases.

Electrical Rectification By Selective Wave-Function Coupling In Small Ag Clusters On Si(111)-(7x7)

Electrical Rectification by Selective Wave-Function Coupling in Small Ag Clusters Onsi(111)−(7×7)

Electronic Structure Of Identical Metal Cluster Arrays On Si(111)-7x7 Surfaces

Assembling and Disassembling Ag Clusters on Si(111)-(7×7) by Vertical Atomic Manipulation.

Creating and modulating electronic states on noble metal surfaces: ultrathin Ag islands on Si(111)-7$\times$7 as a prototype

Probing The Generalized Magicity Of Ag Nanoclusters Constructed On Si(111) By Atomic Manipulation

Creating and Modulating Electronic States on Noble Metal Surfaces: Ultrathin Ag Islands on Si(111)-7×7 As a Prototype

Detecting Surface Resonance States Of Si(111)-Root 3x Root 3-Ag With A Scanning Tunneling Microscope

Self-organized Arrays of Cd Nanocluster on Si (111)-7×7 Surface

Electronic-Structures Of Ag-Adsorbed Si(111) Surface

First-principles Study of Geometric and Electronic Structures of Si(111)-√7 × √3-in Surface Reconstruction

Rectifying Surface Implemented with a Coupled Array

Structural and Electronic Properties of Identical-Sized Zn Nanoclusters Grown on Si(111)-(7x7) Surfaces.

Borderline Magic Clustering: the Fabrication of Tetravalent Pb Cluster Arrays on Si(111)-(7x7) Surfaces.

Identifying the Numbers of Ag Atoms in Their Nanostructures Grown on a Si(111)-(7 × 7) Surface

ROLES OF STM TIP AND EXTERNAL ELECTRIC FIELD IN THE SINGLE ATOM MANIPULATION ON Si(111) 7×7 SURFACE

Atomic Superlattice Formation Mechanism Revealed by Scanning Tunneling Microscopy and Kinetic Monte Carlo Simulations

Scanning tunnelling microscope tip-induced reconstruction on Si(111) √3 × √3 R30°-Ag surface

Ab Initio Investigations Of The Transport Properties Of A Ge-7 Cluster

Diffusions of small clusters on Pt(111) and Cu(111) surfaces

Electronic Structure Of Silicene On Ag(111): Strong Hybridization Effects