Scanning tunneling microscopy study of Gd@C82 on Si(111) 7 × 7 surface

Yu Liu,Ziyong Shen,Tao Sun,Shimin Hou,Xingyu Zhao,Zengquan Xue,Zujin Shi,Zhennan Gu
2006-01-01
Abstract:Structures and electronic properties of the endohedral metall of ullerence, Gd@C82, adsorbed on Si(111) reconstructed surface was studied with ultrahigh vacuum scanning tunneling microscopy (UHV-STM). STM images show that the adsorbed Gd@C82 molecules display semi-conducting properties and above the three adatoms in the 7 × 7 unit cell is the preferential, stable adsorption site. Moreover, electron transfer between Gd and C82 cage strongly affects local density of states (LDOS) of Gd@C82.
What problem does this paper attempt to address?