Geometric And Electronic Properties Of Endohedral Si@C-74
Chunmei Tang,Yongbo Yuan,Kaiming Deng,Yuzhen Liu,Xiangyin Li,Jinlong Yang,Xin Wang
DOI: https://doi.org/10.1063/1.2339022
2006-01-01
Abstract:The generalized gradient approximation based on density functional theory is used to analyze the geometric and electronic properties of Si@C-74. It is found that among the five possible optimized geometries of Si@C-74, the most favorable endohedral site of Si atom is under the center of a pentagon ring on the sigma(h) plane, i.e., Si@C-74-5, which is different from the center stable site for Si in C-74 calculated by the semiempirical molecular orbital calculations and molecular mechanics calculations, and it is also different from the stable site, i.e., under a [6, 6] bond along the C-2 axis on the sigma(h) plane in C-74 for metal atoms Ba, Ca, and Eu. The deformation charge density on the sigma(h) plane reveals that the Si-C bonds in Si@C-74-5 have covalent character, while the Mulliken charge analysis together with a longer Si-C bond length reveals that the Si-C bonds in Si@C-74-5 have ionic character. Therefore, we infer that Si-C bonds in Si@C-74-5 contain both covalent and ionic characters. (c) 2006 American Institute of Physics.