Abstract:Over the last two decades, scanning tunnelling microscopy (STM) has become one of the most important ways to investigate the structure of crystal surfaces. STM has helped achieve remarkable successes in surface science such as finding the atomic structure of Si(111) and Si(001). For high-index Si surfaces the information about the local density of states obtained by scanning does not translate directly into knowledge about the positions of atoms at the surface. A commonly accepted strategy for identifying the atomic structure is to propose several possible models and analyze their corresponding {\em simulated} STM images for a match with the experimental ones. However, the number of good candidates for the lowest-energy structure is very large for high-index surfaces, and heuristic approaches are not likely to cover all the relevant structural models. In this article, we take the view that finding the atomic structure of a surface is a problem of stochastic optimization, and we address it as such. We design a general technique for predicting the reconstruction of silicon surfaces with arbitrary orientation, which is based on parallel-tempering Monte Carlo simulations combined with an exponential cooling. The advantages of the method are illustrated using the Si(105) surface as example, with two main results: (a) the correct single-step rebonded structure [e.g., Fujikawa {\em et al.}, Phys. Rev. Lett. 88, 176101 (2002)] is obtained even when starting from the paired-dimer model [Mo {\em et al.}, Phys. Rev. Lett. 65, 1020 (1990)] that was assumed to be correct for many years, and (b) we have found several double-step reconstructions that have lower surface energies than any previously proposed double-step models.

Studies of Beam Optics and Scattering in the Next Linear Collider Post-Linac Collimation System

Theoretical Model and Experimental Analysis of STM Images on the Surface of the Monocrystalline Si

First-principles study on scanning tunneling microscopy images of hydrogen-terminated Si(110) surfaces

Scanning Tunneling Microscopy Study of Surface Reconstruction Induced by N Adsorption on Cu（100） Surface

Scanning Tunneling Microscopy of Photoexcited Carriers at the Si(001) Surface

STM studies of Si(100)-2×1 oxidation: defect chemistry and Si ejection

Vibration of the Dimer on Si(001) Surface Excited by STM Current

Electronic States of Si(100) Reconstructed Surfaces

High-Resolution Scanning Tunneling Microscopy Imaging Of Si(111)-7 X 7 Structure And Intrinsic Molecular States

Theoretical Investigation of an Intermediate in the STM Tip-Induced Atomic Process on H/Si(100) Surfaces

High-resolution Scanning Tunneling Microscopy Imaging of Si(1 1 1)-7 × 7 Structure and Intrinsic Molecular States

Study of Metastable Reconstructions of Si(111) Surface by STM

STM Study of Si(337) Surface

Structural and Electronic Properties of Ge-Si, Sn-Si, and Pb-Si Dimers on Si(001) from Density-Functional Calculations

An in-situ high temperature scanning tunnelling microscopy study of the boron-induced √3 × √3 reconstruction on the Si(111) surface

Scanning tunneling microscopy evidences for surface electron scattering by underlying atoms

Scanning Tunneling Microscopy Of The Si(111)-7x7 Surface And Adsorbed Ge Nanostructures

Reconstruction of silicon surfaces: a stochastic optimization problem

Electronic correlation and the Si (100) surface: Buckling versus nonbuckling

Direct observation of the Si(110)-(16×2) surface reconstruction by atomic force microscopy

Bias-dependent Scanning Tunneling Microscopy Investigation of Potassium Adsorption on Asi(111)−7×7surface