Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

An in-situ high temperature scanning tunnelling microscopy study of the boron-induced √3 × √3 reconstruction on the Si(111) surface

Observation of B segregation on Si(113) by scanning tunneling microscopy

Scanning Tunnelling Microscope Tip-Induced Reconstruction On Si(111) Root 3 X Root 30 Degrees-Ag Surface

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Scanning tunnelling microscope tip-induced reconstruction on Si(111) √3 × √3 R30°-Ag surface

STM and RHEED study of the Si(001)-c(8x8) surface

Scanning Tunnelling Microscope Tip-Induced Reconstruction on Si(111) (3) 1/2 ×(3) 1/2 R30°-Ag Surface

Tip-induced Band Bending on Sr/Si(100)-2×3 Reconstructed Surface

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Boronizing Structures of Si(113) Surfaces

An atomic structural model of (23×23)-R30° reconstruction proposed for 3C–SiC(111) crystallized islands on Si(111) by C60 precursor

Lanthanum-induced Quasi-One-dimensional Reconstructions on Si(111)

STM Study of Si(337) Surface

Reconstruction of silicon surfaces: a stochastic optimization problem

Studies of Beam Optics and Scattering in the Next Linear Collider Post-Linac Collimation System

Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study

Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED

Combining Scanning Tunneling Microscope (STM) Imaging and Local Manipulation to Probe the High Dose Oxidation Structure of the Si(111)-7×7 Surface

Atomic Structure of Sr-induced Reconstructions on the Si(100) Surface

Boron Deactivation In Heavily Boron-Doped Czochralski Silicon During Rapid Thermal Anneal: Atomic Level Understanding

Study of Metastable Reconstructions of Si(111) Surface by STM