Abstract:Using Vary-temperature Scanning Tunnelling Microscopy (VT-STM), the geometric and electronic structures of technological important Sr/Si(100)-2×3 surface were investigated. Two important findings explained in this research. First, a phenomenon similar to quantum corral observed in the empty state STM image that near the bottom of the conduction band. This is aroused from the surface vacancies and phase boundary in the Sr/Si(100)-2×3 surface. And a new Sr/Si(100)-2×6 reconstructed structure coexist with Sr/Si(100)-2×3 surface has been prepared by accurately controlling the annealing temperature, both surface’s geometric structures can be described by dimer vacancy model. Second, tip-induced band bending phenomenon was observed in the Sr/Si(100)-2×3 surface at substrate temperature range from 76K to 300K. Experimental LDOS results from n and p-type silicon substrate confirms 0.3eV up the motion of the valence band minimum compare with bare Si(100)-2×1 surface. Buckled and unbuckled silicon dimer coexisting in the Sr/Si(100)-2×3 reconstructed surface contribute to the tip-induced band bending and energy band gap widen phenomenon. Which confirms that Sr atoms transfer electrons to the nearby silicon dimers, make the first layer silicon dimers kept at unbuckled state.

Observation of B segregation on Si(113) by scanning tunneling microscopy

Boronizing Structures of Si(113) Surfaces

An in-situ high temperature scanning tunnelling microscopy study of the boron-induced √3 × √3 reconstruction on the Si(111) surface

Multistable Features of Boronized Interstitial‐pentamers on Si(113) Surfaces

Structural Features of Boron-Doped Si(113) Surfaces Simulated by Ab Initio Calculations

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Atomic Structures of Boron-Induced Protrusion Features on Si(100) Surfaces

Formation of the Schottky barrier at (3 × 1)NaSi(111) surface

Observation of a Surface Alloying-to-dealloying Transition During Growth of Bi on Ag(111)

Atomic Structure Of The Si(112) 7x1-In Surface

Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation

Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Investigation of interaction between defects in Si by means of monitoring point defect fluxes

Scanning Tunneling Microscopy Observation of Surface Superstructures During the Growth of in on In/Si(111) Surface

Local geometry around B atoms in B/Si(111) from polarized x-ray absorption spectroscopy

Surface reconstruction induced anisotropic energy landscape of bismuth monomers and dimers on the Si(001) surface

Adsorption of Na on (111) Si Surfaces in an AlSi Alloy

Tip-induced Band Bending on Sr/Si(100)-2×3 Reconstructed Surface

Stm Observation of Pit Formation and Evolution During the Epitaxial Growth of Si on Si(001) Surface