Abstract:Polysilicon serves as a primary raw material in the production of solar cells and semiconductors. However, its impurity content, particularly boron, poses significant challenges during the chemical vapor deposition (CVD) process. Therefore, it is essential to investigate the behavior of boron impurities during CVD. In this study, we conducted first-principles calculations to explore the adsorption behavior and deposition mechanism of boron-containing gases (BCl3, BHCl2, B2H6) on the Si(100) surface. We considered different adsorption sites and performed a systematic analysis of various adsorption systems' adsorption energy, charge transfer, and electronic properties. Our findings indicate that BCl3, BHCl2, and B2H6 molecules undergo dissociative chemisorption at specific adsorption sites. Moreover, charge transfer analysis confirms that each of these adsorbed molecules functions as an electron acceptor. Subsequent analyses, including total charge density (TCD), charge density difference (CDD), total density of states (TDOS), and projected density of states (PDOS), collectively underscore the robust electronic interactions between the gaseous molecules and the Si(100) surface. Through the computation of transition states and energy barriers across three potential reaction pathways, we identify a predominant sequence: BCl3 -> BCl2+Cl -> BCl+Cl -> B+Cl, that governs boron impurity formation on the Si(100) surface during CVD. Our work elucidates the underlying microscopic mechanisms of boron-containing gas adsorption and deposition in the CVD context.

Atomic Structures of Boron-Induced Protrusion Features on Si(100) Surfaces

Structural Features of Boron-Doped Si(113) Surfaces Simulated by Ab Initio Calculations

Boronizing Structures of Si(113) Surfaces

Multistable Features of Boronized Interstitial‐pentamers on Si(113) Surfaces

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Observation of Boron Doping Induced Surface Roughening in Silicon Molecular Beam Epitaxy

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

Boron-mediated growth of Ge quantum dots on Si(100) substrate

Insight into BS ratio model and surface atom interactions of co-doping diamond: First-principles studies

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Observation of B segregation on Si(113) by scanning tunneling microscopy

Two-dimensional boron on Pb (110) surface

Two-dimensional Boron on Pb (1 1 0) Surface