Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation

Study on solid-phase crystallization of B-doped a-Si:H film

Study of Crystallization and Phase Mixing in Sio2/Siox Superlattices Through Form Birefringence Measurements

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Observation of B segregation on Si(113) by scanning tunneling microscopy

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Nickel Silicide Formation on Shallow Junctions

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Locating Si Atoms in Si-doped Boron Carbide: A Route to Understand Amorphization Mitigation Mechanism

X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions

Investigation of Sb diffusion in amorphous silicon

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Experimental Investigation on Formation of Al-Si Clusters and Nanocrystals in the Segregation of Ion-Implanted Al on Si(100)

An in-situ high temperature scanning tunnelling microscopy study of the boron-induced √3 × √3 reconstruction on the Si(111) surface

Boron‐dependent Microstructural Evolution, Thermal Stability, and Crystallization of Mechanical Alloying Derived SiBCN

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Investigation of interaction between defects in Si by means of monitoring point defect fluxes