Abstract:Abstract Ion implantation is an important technique in semiconductor processing and has become a key technology for 4H-SiC devices. Today, aluminum (Al) implantations are routinely used for p-type contacts, p + -emitters, terminations and many other applications. However, in all crystalline materials, quite a few ions find a path along a crystal channel, so-called channeling, and these ions travel deep into the crystal. This paper reports on the channeling phenomenon during Al implantation into 4H-SiC, and in particular, the influence of a thin native oxide will be discussed in detail. The effects of thermal lattice vibrations for implantations performed at elevated temperatures will also be elucidated. 100 keV Al ions have been implanted along the [000-1] direction employing samples with 4° miscut. Before implantation, the samples have been aligned using the blocking pattern of backscattered protons. Secondary ion mass spectrometry has been used to record the Al depth distribution. To predict implantation profiles and improve understanding of the role of crystal structure, simulations were performed using the Monte-Carlo binary collision approximation code SIIMPL. Our results show that a thin surface layer of native oxide, less than 1 nm, has a decisive role for de-channeling of aligned implantations. Further, as expected, for implantations at elevated temperatures, a larger degree of de-channeling from major axes is present due to increased thermal vibrations and the penetration depth of channeled aluminum ions is reduced. The values for the mean-square atomic displacements at elevated temperatures have been extracted from experimental depth profiles in combination with simulations.

Experimental Investigation on Formation of Al-Si Clusters and Nanocrystals in the Segregation of Ion-Implanted Al on Si(100)

Precipitation and Crystallization of Nanometer Si Clusters in Annealed Si-Rich Sio2 Films

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Experimental Characterization and First-Principles Calculations of Zn Segregation at the Β″-Mg5al2si4/al Interfaces in Al-Mg-Si Alloys

Study on the properties of nanocrystalline silicon formed by aluminum-induced crystallization at low temperature

Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Effects of different incidence rates of carbon and silicon clusters on the surface properties of SiC films

Phase stability and the interface structure of a nanoscale Si crystallite in Al-based alloys

The coarsening of silicon particles in a submicron-grained layer-deposited Al-12wt% Si alloy

Study on Phase Separation in A-Siox for Si Nanocrystal Formation Through the Correlation of Photoluminescence with Structural and Optical Properties

Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Investigating the physical mechanism of ion-slicing in AlN and hetero-integrating AlN thin film on Si(100) substrate

Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing

The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN<sub>x</sub>/a-Si:H/a-SiN<sub>x</sub>structures

Characterization of Sn and Si nanocrystals embedded in SiO2 matrix fabricated by magnetron co-sputtering

Structural Evolution of A-Si:H/sio 2 Multilayers Upon Step by Step Thermal Annealing

In‐situ Observation of Atomic Diffusion at Epitaxial Al/Si Interface