Abstract:The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO$_2$ layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800$^o$C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO$_2$ sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO$_2$-RTO layer is more Si rich due to Si diffusion from the SiO$_2$-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.

Characterization of Sn and Si nanocrystals embedded in SiO2 matrix fabricated by magnetron co-sputtering

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Precipitation and Crystallization of Nanometer Si Clusters in Annealed Si-Rich Sio2 Films

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Tin-induced Enhancement of Photoluminescence and Crystal Growth in Si-rich Silica Films

Light Emission from Si Nanoclusters Formed at Low Temperatures

Study on Phase Separation in A-Siox for Si Nanocrystal Formation Through the Correlation of Photoluminescence with Structural and Optical Properties

Photoluminescence and Structural Properties of Si Nanoparticles Embedded in Sio2 Matrix by Reactive Rf Magnetron Sputtering

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Semiconductor Nanocrystals Formed in SiO2 by Ion Implantation

Annealing Effects on the Size of Si-nanocrystals Embedded in Bulk SiO

Study on the properties of nanocrystalline silicon formed by aluminum-induced crystallization at low temperature

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

Preparation nanometer Si clusters by RF magnetron sputtering technique

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

Thermoelectric properties of SiC nanocomposite Mg 2 Si 0.4 Sn 0.6 with Sb doping prepared by vacuum induction levitation melting and spark plasma sintering

Hidden State of Si 50 Ge 50 Nanoparticles During Rapid Solidification