Tin-induced Enhancement of Photoluminescence and Crystal Growth in Si-rich Silica Films

C. Ma,L. Bi,J. Y. Feng
DOI: https://doi.org/10.1016/j.jcrysgro.2007.01.049
IF: 1.8
2007-01-01
Journal of Crystal Growth
Abstract:The effect of local Sn-doping on the photoluminescence (PL) properties of the Si-rich silica (SRSO) thin film was investigated. In order to dope Sn into the SRSO film, we introduced a Sn interlayer in the film. After annealing at temperatures higher than 1000°C, the PL intensity of the Sn-doped samples was about 2 times higher than that of the undoped ones, while Sn-doped and undoped samples annealed at lower temperatures had almost the same PL intensities. The microstructure and mechanism of the PL improvement of this SiOx/Sn/SiOx system were analyzed by Raman scattering spectroscopy, Auger electron spectroscopy, and X-ray diffraction.
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