Abstract:Owing to its merits of high corrosion resistance,high temperature stability as well as good mechanical strength etc.,silicon n itride membrane (SiN) has been widely used as the experimental carrier of transm ission electron microscope (TEM),scanning electron microscopy (SEM),atomic for ce microscope (AFM),X-ray photoelectron spectroscopy (XPS),energy dispersive X-Ray spectroscopy (EDX) and other characterization.In particular,SiN can be used as a low disturbing background for SEM observation.However,the poor lumin escent property of SiN thin film has restricted its wide application in fluoresc ent devices.In order to enhance the fluorescence efficiency of silicon nitride membrane,a series of ZnO films were prepared on a SiNx film substrate wit h radio frequency magnetron sputtering (RF magnetron sputtering) technology duri ng the experiment.Samples were then non-situ and in-situ annealed in nitrogen atmosphere,respectively.Then,atomic force microscope (AFM),scanning electro n microscopy (SEM) and Raman spectroscopy (Raman) were applied to study the micr ostructure and photoluminescence (PL) properties of the prepared films.This pap er also systemically studies the luminescence of the prepared thin films.The re sults show that,luminescent intensity increases after sputtering,while anneali ng further promoted the grain growth,a substantial increase in crystallization behavior and a decrease in grain boundary.The microstructure and luminescence p roperties of ZnO/SiN thin films prepared by RF magnetron sputtering were signifi cantly influenced by annealing method.Compared with the SiNx film,near the ban d edge of the intrinsic emission intensity (about 380 nm) of untempered ZnO/SiN x films and N2 atmosphere ex-situ annealed ZnO/SiNx films were in creased by more than 7.7 times and 34.0 times.Compared with non-situ anneale d films,in-situ annealed films contained more oxygen vacancy defects,thus sho wing a stronger visible light PL intensity.In-situ annealed films exhibited a higher photoluminescence capacity during the wavelength from 425to 600 nm of v isible light.These results can help to optimize the preparation parameters of s ilicon nitride based ZnO fluorescent films.

Photoluminescence and Structural Properties of Si Nanoparticles Embedded in Sio2 Matrix by Reactive Rf Magnetron Sputtering

Properties of Si-rich SiO2 Films by RF Magnetron Sputtering

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Photoluminescence study of Si oxide films with different Si-rich degrees

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effects of Γ-Ray Irradiation on Photoluminescence Spectra from Si-rich Silicon Oxide

Modulation Effect of Microstructures in Silicon-Rich Oxide Matrix on Photoluminescence from Silicon Nanoclusters Prepared by Different Fabrication Techniques

Photoluminescence from Nanometer Ge Particle Embedded Si Oxide Films

Tin-induced Enhancement of Photoluminescence and Crystal Growth in Si-rich Silica Films

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films

Origin and Evolution of Photoluminescence from Si Nanocrystals Embedded in Asio2matrix

Photoluminescence of Silicon Nitride-Based ZnO Thin Film Developed with RF Magnetron Sputtering

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

Origin of Photoluminescence Peaks in Ge–SiO2 Thin Films