Abstract:Si-rich SiO 2 films with three different degrees of Si-richness were deposited by RF magnetron sputtering using Si-SiO 2 composite targets.x-ray photoelectron spectroscopy measurements indicate that Si clusters were presented in the as-deposited films.The precipitation and crystalliza-tion of nanometer Si clusters in SiO 2 films annealed at high temperatures have been studied using high-resolution transmission electron microscopy and electron diffraction.Si nanocrystallites were ob-served in the two samples with more degrees of Si-richness.The area percentage of Si in the com-posite target increased from20%to30%,the average size of Si nanocrystallites increased about 15%,and the density of Si nanocrystallites increased by a factor of2.5.The average size and density of Si nanocrystallites in the films increased notably as the annealing temperature was in-creased from900℃to1100℃.

Preparation nanometer Si clusters by RF magnetron sputtering technique