Silicon-riched-oxide Cluster Assembled Nanostructures Formed by Low Energy Cluster Beam Deposition

M. Han,J.F. Zhou,F. Q. Song,C. R. Yin,M. D. Liu,J. G. Wan,G. H. Wang
DOI: https://doi.org/10.1140/epjd/e2003-00171-0
2003-01-01
Abstract:. Free beam of silicon oxide nanoclusters is produced by a gas aggregation source from SiO precursor. Due to the disproportionation reaction during the condensation of SiO vapor the generated clusters are Si-riched. The clusters are collimated to be a fine beam and deposited on the substrate at room temperature. The microstructures of the cluster-based nanofilm are characterized by TEM. It is shown that with appropriate impacting parameters, Si-riched oxide nanofilms assembled from uniformly distributed isolated clusters can be obtained. And the clusters can self-organize into partially densely ordered packing within local domains. XPS spectra are taken to analyze the chemical components of the nanofilms. Photoluminescence from the Si-riched oxide nanofilms has also been observed.
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