The Generation Mechanism of Silicon Oxide–aluminum Oxide Compound Clusters by Laser Ablation of Siliceous Materials

C Xu,L Zhao,SX Qian,YF Li,YC Long
DOI: https://doi.org/10.1016/s1387-1811(00)00212-2
IF: 5.876
2000-01-01
Microporous and Mesoporous Materials
Abstract:The generation of silicon dioxide–aluminum oxide compound clusters under 308 nm XeCl excimer laser ablation of ZSM-5 zeolites with different SiO2/Al2O3 ratios was studied by time-of-flight mass spectrometry. Two Al-containing cluster sequences [(SiO2)n−1(AlO2)]− and [(SiO2)nOAl]− are observed in the negative ion channel. Through the relationship between the abundance distribution of cluster sequences and the silicon aluminum ratio, the growth mechanism of [(SiO2)n−1(AlO2)]− is discussed. Owing to the high electron affinity of AlO2 compared to small (SiO2)n clusters, AlO2 is considered to be the core of growth of the compound cluster [(SiO2)n−1(AlO2)]−.
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