Abstract:Laser-activation-modification of semiconductor surfaces (LAMSS) was carried out on silicon with a series of 1-alkenes. These laser spots were studied by time of flight secondary ion mass spectrometry (ToF-SIMS). The resulting spectra were analyzed using the multivariate curve resolution (MCR) method within the Automated eXpert Spectral Image Analysis (AXSIA) toolkit, and also by MCR and cluster analysis using commercially available toolboxes for Matlab: the PLS_Toolbox and the MIA_Toolbox, respectively. AXSIA based MCR generally finds three components for the spectral images: one for the background and two for the laser-activated spots, for both the positive and negative ion images. The negative ion component spectra from the spots show increased carbon and hydrogen signals compared to oxygen. They also show reduced chlorine and fluorine (contamination) peaks. In order to compare AXSIA–MCR results from different images, the AXSIA component spectra of different spots were further analyzed by principal components analysis (PCA). PCA of all of the negative ion components shows that component 1 is chemically distinct from components 2 and 3. PCA of all of the positive ion components yields the same result. The loadings plots of this PCA analysis confirm that component 1 generally contains fragments expected from the substrate, while components 2 and 3 contain fragments expected from an overlayer composed of alkyl chains in the spots. A comparison of the two MCR analyses suggests that roughly the same information can be obtained from AXSIA, which is not commercially available, and the PLS_Toolbox. Cluster analysis of the data also clearly separates the spots from the backgrounds. A key finding from these analyses is that the degree of surface functionalization in a LAMSS spot appears to decrease radially from the center of the spot. Finally, a comparison of atomic force microscopy (AFM) of the spots versus the AXSIA analysis of the ToF-SIMS data produced another important result, which is that the surface morphology is only weakly correlated with the LAMSS chemistry.

Laser Ablation Time-of-flight Mass Spectrometric Diagnosis of the Surface States of Porous Siliceous Materials

Laser-induced Clustering Dynamics of [(sio2)nx]− from Porous Silica Powders

Hybrid micro/nano-structure formation by angular laser texturing of Si surface for surface enhanced Raman scattering.

The Generation Mechanism of Silicon Oxide–aluminum Oxide Compound Clusters by Laser Ablation of Siliceous Materials

Direct Observation Of The Mesopores In Zsm-5 Zeolites With Hierarchical Porous Structures By Laser-Hyperpolarized Xe-129 Nmr

The generation mechanism of gaseous [(SiO 2) nX] - clusters

The generation mechanism of gaseous [(SiO2)(n)X](-) clusters

Investigation of the Multimechanism Laser Cleaning Dynamics for Rough Fused Silica Surfaces with Organic Contaminants: A Computational Simulation and Atomic Analysis.

Liquid-Assisted Femtosecond Laser Precision-Machining of Silica.

A High Performance Method for the Accurate and Precise Determination of Silicon Isotopic Compositions in Bulk Silicate Rock Samples Using Laser Ablation MC-ICP-MS

Cluster generation from doped silica aerogels by XeCl excimer laser ablation

Laser Ablation of Silicon Wafers: New Findings, New Insights (conference Presentation)

Angle-Resolved Time-Of-Flight Studies of Laser-Assisted Chemical Etching Reactions

Investigation on Hybrid Laser Ablation and Its Application in Fused Silica Damage Mitigation.

Experimental research on SiO2 cluster generation from doped silica aerogel by laser ablation

Matrix-Assisted Laser Desorption/Ionization Mass Spectrometry Using Porous Silicon And Silica Gel As Matrix

In-situ Testing of Surface Evolution of SiC During Thermal Ablation: Mechanisms of Formation, Flowing and Growth of Liquid Silica Beads

Study of surface wettability on fused silica by ultrafast laser-induced micro/nano-surface structures

Sub-micrometer-scale Chemical Analysis by Nanosecond-Laser-induced Tip-Enhanced Ablation and Ionization Time-of-flight Mass Spectrometry

Study on Ablation Behaviors and Ablation Rates of a 193nm ArF Excimer Laser System for Selected Substrates in LA-ICP-MS Analysis

Laser Activation-Modification of Semiconductor Surfaces (LAMSS) of 1-Alkenes on Silicon: A ToF-SIMS, Chemometrics, and AFM Analysis