Abstract:Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi$_2$, CoSi$_2$, NiSi and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no difference in the thermal interface conductance of epitaxial and non-epitaxial silicide/silicon interfaces. The effect of substrate carrier concentration is also investigated over a wide range of p- and n-type doping, and is found to be independent of carrier concentration, regardless of whether the interface is epitaxial and regardless of silicide type. In the case of epitaxial CoSi$_2$, a comparison of temperature dependant experimental data is made with two detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. At temperatures above 100K, the AGF approach greatly underpredicts the CoSi$_2$ data, while the DMM prediction matches the data well. The full-dispersion DMM is also found to closely predict the experimentally observed temperature-dependent interface conductance for epitaxial NiSi/Si and non-epitaxial TiSi$_2$/Si interfaces. In the case of epitaxial PtSi/Si interfaces, full dispersion DMM significantly overpredicts the experimental data.

In‐situ Observation of Atomic Diffusion at Epitaxial Al/Si Interface

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Atomistic modeling of diffusion processes at Al(Si)/Si(111) interphase boundaries obtained by vapor deposition

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Atomistic modeling of metal-nonmetal interphase boundary diffusion

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

Evolution of secondary defects in arsenic implanted Si

In-Situ Observation of the Formation of NiSi/Ni<sub>2</sub>Si Heterojunction in SiGe Nanowire with Al<sub>2</sub>O<sub>3</sub> Diffusion Barrier Layer

Kick-out Diffusion of Al in 4H-Sic: an Ab Initio Study

Phase stability and the interface structure of a nanoscale Si crystallite in Al-based alloys

NiSi2/Si interface chemistry and epitaxial growth mode

Density gradient segregation of Cu at the Si 2 Hf/Al interface in an Al-Si-Cu-Hf alloy

Thermal Transport Across Metal Silicide-Silicon Interfaces: An Experimental Comparison between Epitaxial and Non-epitaxial Interfaces

First-principle calculations on the structure of 6H-SiC/Al interface

Atomic-scale investigation of Si/Al interface in multilayer aluminum sheets using HRTEM and first-principle calculation

Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates

Microstructure and Performance of Al-Si Alloy with High Si Content by High Temperature Diffusion Treatment

Understanding the Clean Interface Between Covalent Si and Ionic Al2O3

Thermal diffusion and epitaxial growth of Ag in Ag/SiO2/Si probed by XRD, depth-resolved XPS, and slow positron beam

Epitaxial growth of SiC on (100) Diamond