Abstract:Thermodynamic behavior investigations on nanomaterials are of great scientific interest and possess technological implications for advancing nanoscience and nanotechnology. However, nanoscale thermodynamic studies on ceramic semiconductors are faced with great challenges due to their thermostability, and there lacks a percipient understanding of their atomistic thermal behaviors. Here, the atomic‐scale mechanism of the melting and coalescence processes of binary semiconductors, including rutile TiO2(R) and SnSe nanostructures, via real‐time electron beam (e‐beam) irradiation is reported. Under the e‐beam, the inelastic electron‐matter interactions and the low thermal conductivity of the samples cause a local temperature increase. The in situ melting process is recorded via high‐resolution TEM imaging, which exclusively shows a specific planar melting order of the (001), (011), and (100) for TiO2(R). This measurement provides direct evidence that matches the surface energy differences predicted by existing theoretical calculations and experiments. A similar phenomenon is induced and observed on SnSe, which derives a particular melting order of (210), (211), and (002). Furthermore, the in situ melting and coalescence analysis of ultrafine TiO2(R) nanoparticles suggests surface atom transfer and recrystallization as observed. The demonstration of e‐beam directed shape formation and tailoring reveals the possibility for nano/microscale processing of ceramic nanostructures, which are otherwise considered chemically stable and mechanically robust.

STM Investigation of the Atomic Structures and Dynamic Processes of Germanium and Silicon Surfaces

ATOMIC STRUCTURES AND DYNAMIC PROCESSES OF Ge AND Si SURFACES

Atomic Investigation on the Facet‐Dependent Melting of Ceramic Nanostructures Via in Situ Electron Irradiation

Comparative Scanning Tunneling Microscopy Study on Hexaborides

Surfaces and Interfaces of Group IV Semiconductors

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

Study of Si and Ge growth on Si(100) surface

STM Study of Si(337) Surface

Investigating impurities and surface properties in germanium co-doped multi-crystalline silicon: a combined computational and experimental investigation

Germanium in Czochralski Silicon

On the structure and stability of germanium nanoparticles

Si(313) 12 X 1: Another Metallic Stable Surface Of Silicon Having A Complex Reconstructed Layer

Quantum Tunneling Insights into the Atomic Landscapes of Graphite, Gold, and Silicon

Atomic Resolution Imaging and Measurement of the Local Density of States of Graphite, Gold and Silicon using Scanning Tunnelling Microscopy

High-speed scanning tunneling microscope technique and its application in studying structural dynamics on surfaces

STM Characterization of a Graphitized SiC(0001)surface

Macroscopic and Nanoscale Faceting of Germanium Surfaces

Heteroepitaxy Of Germanium On Si(103) And Stable Surfaces Of Germanium

Detection of Surface States in Quantum Materials ZrTe2 and TmB4 by Scanning Tunneling Microscopy

Scanning tunneling microscopy evidences for surface electron scattering by underlying atoms

Progress in Study of Electronic States and Electron Transport of Nanostructures with STM/STS