Abstract:The formation of NiSi1−xGex on Si1−xGex(111) substrates with x=0, 0.05, and 0.20 at an annealing temperature of 500°C has been studied by x-ray diffraction, transmission electron microscopy, and pole-figure measurements. NiSi formed preferentially oriented on Si, with (100), (001), and (102) parallel to Si(111) and NiSi[010]‖Si⟨211⟩. In NiSi0.95Ge0.05, (001) and (102) maintained their preferential orientations, whereas NiSi0.95Ge0.05(100) was rotated by 30°, so that NiSi0.95Ge0.05[010]‖Si0.95Ge0.05⟨011⟩. An epitaxial alignment in the form of a double axiotaxy, with NiSi0.95Ge0.05(2±11) as well as (20−2)‖Si0.95Ge0.05{220}, simultaneously with NiSi0.95Ge0.05(0±13) as well as (020)‖Si0.95Ge0.05{022}, caused NiSi0.95Ge0.05(100) to tilt over the range of 0°–7.5°. The Ge addition also enhanced the preferentially oriented structure by reinforcing NiSi0.95Ge0.05(123)‖Si0.95Ge0.05(111) through the axiotaxial alignments, NiSi0.95Ge0.05(211) and (−112)‖Si0.95Ge0.05{220}. Observed was also the presence of NiSi0.95Ge0.05(011)‖Si0.95Ge0.05(111), with NiSi0.95Ge0.05[100]‖Si0.95Ge0.05⟨011⟩. In the case of NiSi0.80Ge0.20, the preferential orientations were sharply reduced in favor of NiSi0.80Ge0.20(100)‖Si0.80Ge0.20(111), with NiSi0.80Ge0.20[010]‖Si0.80Ge0.20⟨011⟩ and the 30° rotation thus preserved. The observed Ge influence is shown to be consistent with a model suggested earlier for Si1−xGex(001) substrates, which is based on the nonexistence of Ni(Si1−xGex)2 for all except the smallest values of x. High-resolution transmission electron microscopy was used to show that the surface steps typical of molecular-beam-deposited epitaxial Si1−xGex substrate films do not influence the growth of the NiSi1−xGex.

Heteroepitaxy Of Germanium On Si(103) And Stable Surfaces Of Germanium

Study of Si and Ge growth on Si(100) surface

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Atomic Structure of the Ge(15 3 23) Surface

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Faceting and Nanoscale Faceting Ofge(hhl)surfaces Around (113)

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Macroscopic and Nanoscale Faceting of Germanium Surfaces

Influence of Germanium on the Formation of NiSi1−xGex on (111)-Oriented Si1−xGex

Electronic structure of the Ge/Si(105) hetero-interface

Nanofaceting of unit cells and temperature dependence of the surface reconstruction and morphology of Si(105) and (103)

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Surfaces and Interfaces of Group IV Semiconductors

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

THERMAL STABILITY AND STRUCTURE OF THE EQUILIBRIUM CLEAN SI(103) SURFACE

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces